Air-Side Performance of Fin-and-Tube Heat Exchangers Having Sine Wave Fins and Oval Tubes

Experiments were conducted on sine wave fin-and-tube heat exchangers having oval tubes of 0.6 aspect ratio. Twelve samples having different fin pitches and tube rows were tested. Eight herringbone wave fin-and-tube heat exchangers having round tubes were also tested. For round tube samples, the effect of tube row on j factor is not prominent. For oval tube samples, however, the highest j factor is observed for two row configuration, whereas the lowest one is observed for one row configuration. Possible reasoning is provided considering the flow and heat transfer characteristics of sine wave channel combined with connecting oval tubes. The friction factor decreases as number of tube row increases. Comparison with round tube samples reveals that airside performance of oval fin-and-tube heat exchangers is generally superior except for one-row configuration.

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AIRSIDE PERFORMANCE OF FIN-AND-TUBE HEAT EXCHANGERS HAVING SINE WAVE OR SINE WAVE-SLIT FINS

Journal of Enhanced Heat Transfer ◽

10.1615/jenhheattransf.2013006564 ◽

2013 ◽

Vol 20 (1) ◽

pp. 43-58 ◽

Cited By ~ 2

Author(s):

Nae-Hyun Kim ◽

Baek Youn

Keyword(s):

Heat Exchangers ◽

Sine Wave

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Airside performance of fin-and-tube heat exchangers having sine wave fins under wet condition

Journal of Mechanical Science and Technology ◽

10.1007/s12206-015-0852-0 ◽

2015 ◽

Vol 29 (9) ◽

pp. 4061-4070 ◽

Cited By ~ 2

Author(s):

Nae-Hyun Kim

Keyword(s):

Heat Exchangers ◽

Sine Wave ◽

Wet Condition

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Determination of creep mechanisms in various silicon carbides via TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143973 ◽

1986 ◽

Vol 44 ◽

pp. 484-487

Author(s):

C. H. Carter ◽

J. E. Lane ◽

J. Bentley ◽

R. F. Davis

Keyword(s):

Heat Exchangers ◽

Sintered Material ◽

Polycrystalline Material ◽

Chemical Vapor ◽

Graphite Substrate ◽

Second Phase ◽

Reaction Bonding ◽

Creep Mechanisms ◽

Porous Sic

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.

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