Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range

A MOFs compound [NH2(CH3)2]2[Zn3(bpdc)4]·3DMF (1) shows two step dielectric relaxation and its guest-free framework (1′) possesses an ultra-low κ value of 1.80 (at 100 kHz) over a wide temperature range and high thermal stability.

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Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

Semiconductor Physics Quantum Electronics & Optoelectronics ◽

10.15407/spqeo23.04.361 ◽

2020 ◽

Vol 23 (04) ◽

pp. 361-365

Author(s):

M.K. Bakhadyrkhanov ◽

◽

B.K. Ismaylov ◽

S.A. Tachilin ◽

K.A. Ismailov ◽

...

Keyword(s):

Thermal Stability ◽

Wide Temperature Range ◽

High Thermal Stability ◽

Electrical Parameters ◽

X Ray ◽

Temperature Range ◽

Additional Doping ◽

Thermal Stability Of ◽

Oxygen Atoms

The results of this study show that creation of clusters from impurity nickel atoms almost completely suppresses generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectroscopy, which revealed that the typical cluster consists of silicon atoms (65%), nickel atoms (15%) and oxygen atoms (19%). Based on the experimental results, the authors have suggested that the nickel atoms intensively perform the role of getter for oxygen atoms in the course of clusterization. It was shown that the additional doping of silicon with nickel at T = 1100…1200 °C enables to ensure a sufficiently high thermal stability of its electrical parameters within a wide temperature range.

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Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

Journal of Physics Conference Series ◽

10.1088/1742-6596/2065/1/012013 ◽

2021 ◽

Vol 2065 (1) ◽

pp. 012013

Author(s):

Guofang Yu ◽

Jie Cui ◽

Yue Zhao ◽

Jun Fu ◽

Tian-Ling Ren

Keyword(s):

Wide Temperature Range ◽

Silicon Germanium ◽

Transport Mechanism ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Collector Current ◽

Base Current ◽

Temperature Range ◽

Trap Assisted Tunneling ◽

Assisted Tunneling

Abstract A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 K has been investigated. The measured Gummel characteristics illustrate that the collector current and base current both shift to the higher voltage as the temperature decreases. The fT/fmax are extracted to be 23/40 GHz at 300K, 28/40 GHz at 90 K, and 25/37GHz at 10K, respectively. The effective amplification range becomes narrow as the temperature decreases. And the ideality factor of base current in the low current region is shown to be temperature-dependent and its value is much larger than 2 at cryogenic temperatures. This phenomenon indicates that the base current is not only contributed by drift, diffusion, and Shockley-Read-Hall recombination, but also by trap-assisted tunneling. The Hurkx local trap-assisted tunneling has been used to analyze the non-ideal base transport mechanism. And a calibrated TCAD device model is developed to further verify this non-ideal transport mechanism.

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