TCAD simulation for capture / emission of carriers by traps in SiN: trap-assisted tunneling model extended for capture of carriers injected via Fowler-Nordheim tunneling

We propose the novel trap-assisted tunneling (TAT) model that incorporates the ability to calculate dissipation of the kinetic energy of carriers propagating in the conduction or valence band. The proposed model allows us to evaluate capture efficiency (or the capture cross section) of carriers injected into the SiN charge trap layer via Fowler-Nordheim tunneling. By applying our TAT model to large planar Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) capacitors, experimental data showing that electron capture efficiency depends on the tunnel oxide thickness are physically interpreted. Furthermore, 3-dimensional technology computer-aided design (TCAD) simulation using SiN trap parameters roughly extracted from planar MONOS data shows that the calculated incremental step pulse programming characteristics of the charge trap memory (CTM) prototype device are comparable with measured data. We have found that additional time to calculate SiN trap charges is less than only 5 % of all remaining calculation time.

Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 K has been investigated. The measured Gummel characteristics illustrate that the collector current and base current both shift to the higher voltage as the temperature decreases. The fT/fmax are extracted to be 23/40 GHz at 300K, 28/40 GHz at 90 K, and 25/37GHz at 10K, respectively. The effective amplification range becomes narrow as the temperature decreases. And the ideality factor of base current in the low current region is shown to be temperature-dependent and its value is much larger than 2 at cryogenic temperatures. This phenomenon indicates that the base current is not only contributed by drift, diffusion, and Shockley-Read-Hall recombination, but also by trap-assisted tunneling. The Hurkx local trap-assisted tunneling has been used to analyze the non-ideal base transport mechanism. And a calibrated TCAD device model is developed to further verify this non-ideal transport mechanism.

Direct observation of chaotic resonances in optical microcavities

Optical microcavities play a significant role in the study of classical and quantum chaos. To date, most experimental explorations of their internal wave dynamics have focused on the properties of their inputs and outputs, without directly interrogating the dynamics and the associated mode patterns inside. As a result, this key information is rarely retrieved with certainty, which significantly restricts the verification and understanding of the actual chaotic motion. Here we demonstrate a simple and robust approach to directly and rapidly map the internal mode patterns in chaotic microcavities. By introducing a local index perturbation through a pump laser, we report a spectral response of optical microcavities that is proportional to the internal field distribution. With this technique, chaotic modes with staggered mode spacings can be distinguished. Consequently, a complete chaos assisted tunneling (CAT) and its time-reversed process are experimentally verified in the optical domain with unprecedented certainty.

Photon-Assisted Seebeck Effect in a Quantum Dot Coupled to Majorana Zero Modes

The Seebeck effect is investigated within the framework of a non-equilibrium Green's function technique in a quantum dot (QD) sandwiched between the left and right leads held at different temperatures. We consider that the QD is shelled by a photon field and is side-coupled to a topological superconductor nanowire hosting Majorana zero modes (MZMs). It is found that the thermopower (Seebeck coefficient) can be obviously enhanced by weak QD-MZMs coupling at low temperatures, in addition to its sign reversion that may be used for detecting the existence of MZMs. In the presence of a photon field, the thermopower can be further enhanced due to decreased electrical conductance when electrons' transport probability through each channel is reduced by photon-assisted tunneling (PAT). The hybridization between the MZMs will also induce sign reversion of the thermopower in the absence of a photon field, whereas it has less impact on the thermopower when the QD is shelled by the photon field.