Abstract
We consider a fractional phase-field crystal (FPFC) model in which the classical Swift–Hohenberg equation (SHE) is replaced by a fractional order Swift–Hohenberg equation (FSHE) that reduces to the classical case when the fractional order $\beta =1$. It is found that choosing the value of $\beta $ appropriately leads to FSHE giving a markedly superior fit to experimental measurements of the structure factor than obtained using the SHE ($\beta =1$) for a number of crystalline materials. The improved fit to the data provided by the fractional partial differential equation prompts our investigation of a FPFC model based on the fractional free energy functional. It is shown that the FSHE is well-posed and exhibits the same type of pattern formation behaviour as the SHE, which is crucial for the success of the PFC model, independently of the fractional exponent $\beta $. This means that the FPFC model inherits the early successes of the FPC model such as physically realistic predictions of the phase diagram etc. and, therefore, provides a viable alternative to the classical PFC model. While the salient features of PFC and FPFC are identical, we expect more subtle features to differ. The prediction of grain boundary energy arising from a mismatch in orientation across a material interface is another notable success of the PFC model. The grain boundary energy can be evaluated numerically from the PFC model and compared with experimental measurements. The grain boundary energy is a derived quantity and is more sensitive to the nuances of the model. We compare the predictions obtained using the PFC and FPFC models with experimental observations of the grain boundary energy for several materials. It is observed that the FPFC model gives superior agreement with the experimental observation than those obtained using the classical PFC model, especially when the mismatch in orientation becomes larger.
Phase field crystal simulation of the effect of temperature on low-angle symmetric tilt grain boundary dislocation motion
