Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
2012 ◽
Vol 51
(10R)
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pp. 100201
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2012 ◽
Vol 51
◽
pp. 100201
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2010 ◽
Vol 43
(35)
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pp. 354004
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Keyword(s):
Keyword(s):
2015 ◽
Vol 88
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pp. 50-55
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Keyword(s):
Keyword(s):
2013 ◽
Vol 63
(6)
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pp. 1218-1221
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Keyword(s):