Detection of Sub-Nano-Tesla Magnetic Field by Integrated Magnetic Tunnel Junctions with Bottom Synthetic Antiferro-Coupled Free Layer

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CM07 ◽  
Author(s):  
Kosuke Fujiwara ◽  
Mikihiko Oogane ◽  
Takuo Nishikawa ◽  
Hiroshi Naganuma ◽  
Yasuo Ando
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

2011 ◽  
Vol 50 (1R) ◽  
pp. 013001 ◽  
Author(s):  
Kousuke Fujiwara ◽  
Mikihiko Oogane ◽  
Futoyoshi Kou ◽  
Daisuke Watanabe ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensor ◽  
Free Layer ◽  
Sensor Applications ◽  
Field Sensor

scholarly journals Full voltage manipulation of the resistance of a magnetic tunnel junction

2019 ◽  
Vol 5 (12) ◽  
pp. eaay5141 ◽  
Author(s):  
Aitian Chen ◽  
Yuelei Zhao ◽  
Yan Wen ◽  
Long Pan ◽  
Peisen Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Energy Efficient ◽  
Room Temperature ◽  
Efficient Solution ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Spintronic Devices ◽  
Electrical Control

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

2011 ◽  
Vol 50 ◽  
pp. 013001 ◽  
Author(s):  
Kousuke Fujiwara ◽  
Mikihiko Oogane ◽  
Futoyoshi Kou ◽  
Daisuke Watanabe ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensor ◽  
Free Layer ◽  
Sensor Applications ◽  
Field Sensor

scholarly journals Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

2021 ◽  
Vol 15 (4) ◽  
Author(s):  
Kerem Y. Camsari ◽  
Mustafa Mert Torunbalci ◽  
William A. Borders ◽  
Hideo Ohno ◽  
Shunsuke Fukami
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Characterization of magnetic tunnel junctions (MTJ) with magnetostrictive free layer materials

2004 ◽  
Vol 272-276 ◽  
pp. 2023-2024 ◽  
Author(s):  
M. Löhndorf ◽  
S. Dokupil ◽  
J. Wecker ◽  
M. Rührig ◽  
E. Quandt
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance

2016 ◽  
Vol 10 (1) ◽  
pp. 013001 ◽  
Author(s):  
Motoya Shinozaki ◽  
Eriko Hirayama ◽  
Shun Kanai ◽  
Hideo Sato ◽  
Fumihiro Matsukura ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

scholarly journals Nanoscale true random bit generator based on magnetic state transitions in magnetic tunnel junctions

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Alex S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Paulo P. Freitas ◽  
Ricardo Ferreira
Keyword(s):  
Tunnel Junctions ◽  
Magnetic State ◽  
Magnetic Tunnel Junctions ◽  
Vortex State ◽  
Magnetic Vortex ◽  
State Transitions ◽  
Free Layer ◽  
Plane Field ◽  
Random Bit Generator ◽  
Ac Current

Abstract We present an investigation into the in-plane field induced free layer state transitions found in magnetic tunnel junctions. By applying an ac current into an integrated field antenna, the magnetisation of the free layer can be switched between the magnetic vortex state and the quasi-uniform anti-parallel state. When in the magnetic vortex state, the vortex core gyrates a discrete number of times, and at certain frequencies there is a 50% chance of the core gyrating n or n − 1 times, leading to the proposal of a novel nanoscale continuous digital true random bit generator.

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