Full-range birefringence control with piezoelectric MEMS-based metasurfaces

Dynamic polarization control is crucial for emerging highly integrated photonic systems with diverse metasurfaces being explored for its realization1–6, but efficient, fast, and broadband operation remains a cumbersome challenge. While efficient optical metasurfaces (OMSs) involving liquid crystals suffer from inherently slow responses1, other OMS realizations are limited either in the operating wavelength range (due to resonances involved)2,3 or in the range of birefringence tuning4–6. Capitalizing on our development of piezoelectric micro-electro-mechanical system (MEMS) based dynamic OMSs7, we demonstrate reflective MEMS-OMS dynamic wave plates (DWPs) with high polarization conversion efficiencies (~ 75%), broadband operation (~ 100 nm near the operating wavelength of 800 nm), fast responses (< 0.4 milliseconds) and full-range birefringence control that enables completely encircling the Poincaré sphere along trajectories determined by the incident light polarization and DWP orientation. Demonstrated complete electrical control over light polarization opens new avenues in further integration and miniaturization of optical networks and systems8,9.

Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures

Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.

Analysis methodology for the design of start-up rheostats on thermo-dependent polycrystalline resistances

The article provides a brief analysis of the starting processes of electrical devices in autonomous systems of limited power. The existing methods of automatic start-up and regulation of the operation of electrical machines and apparatus are considered, which are a multi-link system, the reliability of which is determined by a number of intermediate links, and the stepping is one of the biggest drawbacks that negatively affect the dynamics of the starting process. In addition, the issues of simplicity, low cost and small dimensions of the automatic control system for electrical installations are of particular importance in the problem of energy saving. The use of low-power thermistors as part of starting devices requires intermediate equipment and various components, which significantly reduces the reliability of the equipment. The increase in currents flowing through the ballasts simplifies the electrical control and regulation circuits. For the use of polycrystalline semiconductor thermistors in circuits with high currents, it is necessary to use special designs in order to prevent overheating of the thermistor material. The article provides algorithms for the synthesis of starting rheostats. A number of restrictions are considered and formulated, on which the nature of the processes of starting electric motors with the help of thermistor rheostats, which ensure the fulfillment of certain restrictions, depends. Recommendations are given for the formation of optimal starting processes using rheostats built on semiconductor polycrystalline thermistors.

Electrical Control of Quantum Emitters in a Van der Waals Heterostructure

Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies1, 2. Recently, hexagonal boron nitride (hBN) has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters3-7. However, the large band gap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in an hBN–graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark, and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behaviour. Finally, employing these devices we demonstrate a nearly-coherent source with linewidths of ~ 160 MHz. Our results enhance the potential of hBN for tunable solid state quantum emitters for the growing field of quantum information science.

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn3Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn3Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.