spintronic devices
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2022 ◽  
Vol 276 ◽  
pp. 115536
Norhidayah Che Ani ◽  
Mohd Zainizan Sahdan ◽  
Nafarizal Nayan ◽  
Feri Adriyanto ◽  
Kusnanto Mukti Wibowo

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 278
Jia-Qiang Lin ◽  
Ji-Pei Chen ◽  
Zhen-Yu Tan ◽  
Yuan Chen ◽  
Zhi-Feng Chen ◽  

Magnetic skyrmions are promising potential information carriers for future spintronic devices owing to their nanoscale size, non-volatility and high mobility. In this work, we demonstrate the controlled manipulation of skyrmion motion and its implementation in a new concept of racetrack logical device by introducing an inhomogeneous perpendicular magnetic anisotropy (PMA) via micromagnetic simulation. Here, the inhomogeneous PMA can be introduced by a capping nano-island that serves as a tunable potential barriers/well which can effectively modulate the size and shape of isolated skyrmion. Using the inhomogeneous PMA in skyrmion-based racetrack enables the manipulation of skyrmion motion behaviors, for instance, blocking, trapping or allowing passing the injected skyrmion. In addition, the skyrmion trapping operation can be further exploited in developing special designed racetrack devices with logic AND and NOT, wherein a set of logic AND operations can be realized via skyrmion–skyrmion repulsion between two skyrmions. These results indicate an effective method for tailoring the skyrmion structures and motion behaviors by using inhomogeneous PMA, which further provide a new pathway to all-electric skyrmion-based memory and logic devices.

Xiaoyu Zhang ◽  
Ya-jun Tao ◽  
Pei-jie Jiao ◽  
Jian Wang ◽  
Ji Zhang ◽  

Abstract Ferromagnetic insulators have received widespread attention for applications in novel low power consumption spintronic devices. Further optimizing the robust ferromagnetic insulating and developing multifunctional ferromagnetic insulator by integrating other magnetic property can not only ease or pave the way for actual application, but also provide an additional freedom degree for device designing. In this work, by introducing antiferromagnetic CoO into ferromagnetic insulator LaMnO3, we have constructed (1-x)LaMnO3:xCoO composite thin films. The films simultaneously show robust ferromagnetic insulator characteristics and large exchange bias. For x = 0.5 sample, the resistivity is 120 Ω·cm at 250 K while the magnetization is 100 emu/cm3 and the exchange bias field is -2200 Oe at 10 K. Especially, the blocking temperature is up to 140 K. Synchrotron radiation x-ray absorption spectroscopy reveals the coexistence of Mn3+, Mn2+, Co2+ and Co3+, arising from interfacial charge transfer and space charge/defect trapping, should be responsible for the enhanced and integrated multifunctional magnetic properties.

2022 ◽  
Vol 5 (1) ◽  
Hanan Hamamera ◽  
Filipe Souza Mendes Guimarães ◽  
Manuel dos Santos Dias ◽  
Samir Lounis

AbstractThe ultimate control of magnetic states of matter at femtosecond (or even faster) timescales defines one of the most pursued paradigm shifts for future information technology. In this context, ultrafast laser pulses developed into extremely valuable stimuli for the all-optical magnetization reversal in ferrimagnetic and ferromagnetic alloys and multilayers, while this remains elusive in elementary ferromagnets. Here we demonstrate that a single laser pulse with sub-picosecond duration can lead to the reversal of the magnetization of bulk nickel, in tandem with the expected demagnetization. As revealed by realistic time-dependent electronic structure simulations, the central mechanism involves ultrafast light-induced torques that act on the magnetization. They are only effective if the laser pulse is circularly polarized on a plane that contains the initial orientation of the magnetization. We map the laser pulse parameter space enabling the magnetization switching and unveil rich intra-atomic orbital-dependent magnetization dynamics featuring transient inter-orbital non-collinear states. Our findings open further perspectives for the efficient implementation of optically-based spintronic devices.

2022 ◽  
Max Birch ◽  
David Cortés-Ortuño ◽  
Kai Litzius ◽  
Sebastian Wintz ◽  
Frank Schulz ◽  

Abstract Research into practical applications of magnetic skyrmions, nanoscale solitons with interesting topological and transport properties [1,2], has traditionally focused on two dimensional (2D) thin-film systems[3,4]. However, the recent observation of novel three dimensional (3D) skyrmion-like structures, such as hopfions [5], skyrmion strings (SkS) [6-9], skyrmion bundles [11] and skyrmion braids [12], motivates the investigation of new designs, aiming to exploit the third spatial dimension for more compact and higher performance spintronic devices in 3D or curvilinear geometries [13-15]. A crucial requirement of such device schemes is the control of the 3D magnetic structures via charge or spin currents, which has yet to be experimentally observed. In this work, we utilise real-space imaging to investigate the dynamics of a 3D SkS within a nanowire of Co8Zn9Mn3 at room temperature. Utilising single, nanoscale current pulses, we demonstrate current-induced nucleation of a single SkS, and a toggle-like positional switching of an individual Bloch point at the end of a SkS. The observations highlight the possibility to locally manipulate 3D topological spin textures, opening up a range of design concepts for future 3D spintronic devices.

2022 ◽  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

2022 ◽  
Vol 9 ◽  
Yuxuan Xiao ◽  
Hailong Wang ◽  
Eric E. Fullerton

We report on the spin Hall effect in epitaxial Pt films with well-defined crystalline (200), (220), and (111) orientations and smooth surfaces. The magnitude of the spin Hall effect has been determined by spin–torque ferromagnetic resonance measurements on epitaxial Pt/Py heterostructures. We observed a 54% enhancement of the charge-to-spin conversion efficiency of the epitaxial Pt when currents are applied along the in-plane <002> direction. Temperature-dependent harmonic measurements on epitaxial Pt/Co/Ni heterostructures compared to a polycrystalline Pt/Co/Ni suggest the extrinsic mechanism underlying spin Hall effect in epitaxial Pt. Our work contributes to the development of energy-efficient spintronic devices by engineering the crystalline anisotropy of non-magnetic metals.

Xiaomin Cui ◽  
Shaojie Hu ◽  
Takashi Kimura

Abstract Lateral spin valves are ideal nanostructures for investigating spin-transport physics phenomena and promoting the development of future spintronic devices owing to dissipation-less pure spin current. The magnitude of the spin accumulation signal is well understood as a barometer for characterizing spin current devices. Here, we develop a novel fabrication method for lateral spin valves based on ferromagnetic nanopillar structures using a multi-angle deposition technique. We demonstrate that the spin-accumulation signal is effectively enhanced by reducing the lateral dimension of the nonmagnetic spin channel. The obtained results can be quantitatively explained by the confinement of the spin reservoir by considering spin diffusion into the leads. The temperature dependence of the spin accumulation signal and the influence of the thermal spin injection under a high bias current are also discussed.

Qi Wang ◽  
Zhilu Zhang ◽  
Hai-Cai Huang ◽  
Xinyu song ◽  
Yuxiang Bu

The strain effect on the magnetic response of the 2D materials as spintronic devices are always important in actual applications. Due to the intriguing electronic and magnetic properties of two-dimensional...

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