Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fj12 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FJ12 ◽

Author(s):

Huimin Lu ◽

Tongjun Yu ◽

Xinjuan Chen ◽

Jianping Wang ◽

Guoyi Zhang

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Band Engineering ◽

Surface Emission ◽

Emission Enhancement ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes

physica status solidi (c) ◽

10.1002/pssc.200778740 ◽

2008 ◽

Vol 5 (6) ◽

pp. 2364-2366 ◽

Author(s):

A. Atsushi Yamaguchi

Keyword(s):

Valence Band ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Band Engineering ◽

Surface Emission ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab4d7b ◽

2019 ◽

Vol 53 (7) ◽

pp. 073002 ◽

Author(s):

Zhongjie Ren ◽

Huabin Yu ◽

Zhongling Liu ◽

Danhao Wang ◽

Chong Xing ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Band Engineering ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

Applied Physics Express ◽

10.35848/1882-0786/abb86f ◽

2020 ◽

Vol 13 (10) ◽

pp. 102005 ◽

Author(s):

Ryota Ishii ◽

Akira Yoshikawa ◽

Kazuhiro Nagase ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Selective Excitation ◽

Photoluminescence Spectroscopy ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

Excitation Conditions

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Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.200903400 ◽

2010 ◽

Vol 4 (1-2) ◽

pp. 49-51 ◽

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Adam Moldawer ◽

Wei Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal ◽

10.1109/jphot.2020.3047846 ◽

2021 ◽

Vol 13 (1) ◽

pp. 1-8

Author(s):

J. Lang ◽

F. J. Xu ◽

Y. H. Sun ◽

N. Zhang ◽

J. M. Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Velocity Modulation ◽

Deep Ultraviolet ◽

Carrier Velocity ◽

Ultraviolet Light Emitting Diodes

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

Optics Express ◽

10.1364/oe.25.00a639 ◽

2017 ◽

Vol 25 (16) ◽

pp. A639 ◽

Author(s):

Guo-Dong Hao ◽

Naoki Tamari ◽

Toshiyuki Obata ◽

Toru Kinoshita ◽

Shin-ichiro Inoue

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Current Injection ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.05.010 ◽

2015 ◽

Vol 85 ◽

pp. 59-66 ◽

Author(s):

Pai Sun ◽

Xianglong Bao ◽

Songqing Liu ◽

Chunya Ye ◽

Zhaorong Yuan ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

Journal of Applied Physics ◽

10.1063/5.0042712 ◽

2021 ◽

Vol 129 (13) ◽

pp. 133102

Author(s):

Hongfeng Jia ◽

Huabin Yu ◽

Yang Kang ◽

Zhongjie Ren ◽

Muhammad Hunain Memon ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Quantum Structure ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes

Chinese Journal of Luminescence ◽

10.37188/cjl.20210331 ◽

2022 ◽

Vol 43 (01) ◽

pp. 1-7

Author(s):

Liang GUO ◽

◽

Ya-nan GUO ◽

Jian-kun YANG ◽

Jian-chang YAN ◽

...

Keyword(s):

Barrier Height ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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