Simultaneous observation of two dimensional electron gas and polarization in AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy

2016 ◽  
Vol 55 (8S1) ◽  
pp. 08NB13 ◽  
Author(s):  
Kotaro Hirose ◽  
Yasunori Goto ◽  
Norimichi Chinone ◽  
Yasuo Cho
Author(s):  
K. Hirose ◽  
N. Chinone ◽  
Y. Cho

Abstract We measured AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) [1], which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AlGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AlGaN/GaN heterostructure.


2016 ◽  
Vol 858 ◽  
pp. 1182-1185
Author(s):  
Kotaro Hirose ◽  
Norimichi Chinone ◽  
Yasuo Cho

AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN heterostructure.


2002 ◽  
Vol 80 (24) ◽  
pp. 4549-4551 ◽  
Author(s):  
S. R. Kurtz ◽  
A. A. Allerman ◽  
D. D. Koleske ◽  
G. M. Peake

2014 ◽  
Vol 1058 ◽  
pp. 132-135
Author(s):  
Meng Lv ◽  
Guo Lin Yu ◽  
Yong Gang Xu ◽  
Tie Lin ◽  
Ning Dai ◽  
...  

Magnetotransport properties are investigated in two-dimensional electron gas (2DEG) of AlGaN/GaN heterostructure, including the Drude conductance, the Shubnikov-de Haas (SdH) oscillations and the change with temperature, the electron-electron interaction (EEI) and the change with temperature, the weak antilocalization (WAL) and the change with temperature etc.


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