Pulsed Laser Irradiation of Silicon-Germanium-on-Insulator (Si0.17Ge0.83OI) Substrates for Strain Relaxation and Defect Reduction
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1983 ◽
Vol 44
(C5)
◽
pp. C5-449-C5-454
◽
Keyword(s):
1983 ◽
Vol 44
(C5)
◽
pp. C5-23-C5-36
◽
Keyword(s):
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