Pulsed Operation of Resistance Switching Memory of Si/CaF2/CdF2 Resonant-tunneling Quantum-well Structures

Mapping Intimacies ◽

10.7567/ssdm.2013.a-8-4 ◽

2013 ◽

Author(s):

J. Denda ◽

K. Suda ◽

Y. Kuwata ◽

M. Watanabe

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resistance Switching ◽

Quantum Well Structures ◽

Switching Memory

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Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures

Applied Physics Express ◽

10.7567/apex.7.044103 ◽

2014 ◽

Vol 7 (4) ◽

pp. 044103 ◽

Author(s):

Junya Denda ◽

Kazuya Uryu ◽

Keita Suda ◽

Masahiro Watanabe

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resistance Switching ◽

Quantum Well Structures ◽

Memory Characteristics ◽

Switching Memory

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Resistance Switching Memory Operation of CaF2/Si/CaF2 Resonant-tunneling Quantum-well Structures using Nanocrystalline-Si Secondary Barrier Layers

10.7567/ssdm.2015.ps-4-5 ◽

2015 ◽

Author(s):

K. Suda ◽

Y. Kuwata ◽

M. Watanabe

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resistance Switching ◽

Quantum Well Structures ◽

Barrier Layers ◽

Switching Memory ◽

Nanocrystalline Si

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Resistance switching memory using Si/CaF2/CdF2 quantum-well structures

10.7567/ssdm.2009.k-2-6 ◽

2009 ◽

Author(s):

M. Watanabe ◽

R. Hirasawa ◽

Y. Nakashouji

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Quantum Well Structures ◽

Switching Memory

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Switching voltage reduction of resistance switching memory using Si/CaF2/CdF2 quantum-well structures

10.7567/ssdm.2010.f-5-2 ◽

2010 ◽

Author(s):

M. Watanabe ◽

Y. Nakashouji ◽

K. Tsuchiya

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Switching Voltage ◽

Quantum Well Structures ◽

Switching Memory

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Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-well Structures Grown on Metal(CoSi2) Layer

10.7567/ssdm.2012.ps-9-6 ◽

2012 ◽

Author(s):

J. Denda ◽

K. Uryu ◽

M. Watanabe

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Quantum Well Structures ◽

Memory Characteristics ◽

Switching Memory

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Retention characteristics of resistance switching memory using Si/CaF2/CdF2 quantum-well structures

10.7567/ssdm.2011.p-9-14 ◽

2011 ◽

Author(s):

M. Watanabe ◽

K. Uryu

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Quantum Well Structures ◽

Retention Characteristics ◽

Switching Memory

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RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1987596 ◽

1987 ◽

Vol 48 (C5) ◽

pp. C5-457-C5-461

Author(s):

C. J. SUMMERS ◽

K. F. BRENNAN ◽

A. TORABI ◽

H. M. HARRIS ◽

J. COMAS

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Sequential resonant tunneling characteristics of AlAs/GaAs multiple-quantum-well structures

Physical Review B ◽

10.1103/physrevb.38.4198 ◽

1988 ◽

Vol 38 (6) ◽

pp. 4198-4204 ◽

Author(s):

S. Tarucha ◽

K. Ploog

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

Journal of Applied Physics ◽

10.1063/1.4948331 ◽

2016 ◽

Vol 119 (16) ◽

pp. 164501 ◽

Author(s):

Lin'an Yang ◽

Yue Li ◽

Ying Wang ◽

Shengrui Xu ◽

Yue Hao

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Quantum Well Structures ◽

Tunneling Diodes ◽

Asymmetric Quantum

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Blocking of resonant tunneling by electron Bragg reflectors in GaAs/AlxGa1−xAs quantum well structures

Journal of Applied Physics ◽

10.1063/1.1332094 ◽

2001 ◽

Vol 89 (2) ◽

pp. 1175-1179

Author(s):

Seung-Chang Lee ◽

Kevin J. Malloy

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Bragg Reflectors ◽

Quantum Well Structures

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