Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-well Structures Grown on Metal(CoSi2) Layer

Mapping Intimacies ◽

10.7567/ssdm.2012.ps-9-6 ◽

2012 ◽

Author(s):

J. Denda ◽

K. Uryu ◽

M. Watanabe

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Quantum Well Structures ◽

Memory Characteristics ◽

Switching Memory

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Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures

Applied Physics Express ◽

10.7567/apex.7.044103 ◽

2014 ◽

Vol 7 (4) ◽

pp. 044103 ◽

Author(s):

Junya Denda ◽

Kazuya Uryu ◽

Keita Suda ◽

Masahiro Watanabe

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resistance Switching ◽

Quantum Well Structures ◽

Memory Characteristics ◽

Switching Memory

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Resistance switching memory characteristics of CaF2/Si/CaF2resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers

Applied Physics Express ◽

10.7567/apex.9.074001 ◽

2016 ◽

Vol 9 (7) ◽

pp. 074001 ◽

Author(s):

Yuya Kuwata ◽

Keita Suda ◽

Masahiro Watanabe

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Barrier Layers ◽

Memory Characteristics ◽

Switching Memory ◽

Nanocrystalline Si

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Resistance switching memory using Si/CaF2/CdF2 quantum-well structures

10.7567/ssdm.2009.k-2-6 ◽

2009 ◽

Author(s):

M. Watanabe ◽

R. Hirasawa ◽

Y. Nakashouji

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Quantum Well Structures ◽

Switching Memory

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Resistance Switching Memory Operation of CaF2/Si/CaF2 Resonant-tunneling Quantum-well Structures using Nanocrystalline-Si Secondary Barrier Layers

10.7567/ssdm.2015.ps-4-5 ◽

2015 ◽

Author(s):

K. Suda ◽

Y. Kuwata ◽

M. Watanabe

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resistance Switching ◽

Quantum Well Structures ◽

Barrier Layers ◽

Switching Memory ◽

Nanocrystalline Si

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Switching voltage reduction of resistance switching memory using Si/CaF2/CdF2 quantum-well structures

10.7567/ssdm.2010.f-5-2 ◽

2010 ◽

Author(s):

M. Watanabe ◽

Y. Nakashouji ◽

K. Tsuchiya

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Switching Voltage ◽

Quantum Well Structures ◽

Switching Memory

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Retention characteristics of resistance switching memory using Si/CaF2/CdF2 quantum-well structures

10.7567/ssdm.2011.p-9-14 ◽

2011 ◽

Author(s):

M. Watanabe ◽

K. Uryu

Keyword(s):

Quantum Well ◽

Resistance Switching ◽

Quantum Well Structures ◽

Retention Characteristics ◽

Switching Memory

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Pulsed Operation of Resistance Switching Memory of Si/CaF2/CdF2 Resonant-tunneling Quantum-well Structures

10.7567/ssdm.2013.a-8-4 ◽

2013 ◽

Author(s):

J. Denda ◽

K. Suda ◽

Y. Kuwata ◽

M. Watanabe

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Resistance Switching ◽

Quantum Well Structures ◽

Switching Memory

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Resistance Switching Memory Characteristics of Si/CaF2/CdF2Quantum-Well Structures Grown on Metal (CoSi2) Layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cj07 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CJ07 ◽

Author(s):

Junya Denda ◽

Kazuya Uryu ◽

Masahiro Watanabe

Keyword(s):

Resistance Switching ◽

Memory Characteristics ◽

Switching Memory

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Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00726-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 723-727

Author(s):

N Matsumura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Piezoelectric Properties ◽

Quantum Well Structures ◽

Strained Quantum Well

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Bound and unbound exciton-electron states in II-VI quantum well structures with a 2DEG

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00531-9 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 818-821

Author(s):

P Christianen

Keyword(s):

Quantum Well ◽

Electron States ◽

Quantum Well Structures

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