Determination of Magnetization Dynamics of the Material with Spin Triplet States under the Action of a Weak Varying Field and Spin-Lattice Interaction in Zero Constant Field

2021 ◽  
pp. 145-152
Author(s):  
N. P. Fokina ◽  
M. O. Elizbarashvili
Keyword(s):  
Constant Field ◽  
Triplet States ◽  
Magnetization Dynamics ◽  
Spin Lattice ◽  
Spin Triplet

Determination of chemical shift anisotropy tensor and molecular correlation time of proton pump inhibitor omeprazole by solid state NMR measurements

2020 ◽  
Vol 44 (44) ◽  
pp. 19393-19403
Author(s):  
Krishna Kishor Dey ◽  
Manasi Ghosh
Keyword(s):  
Correlation Time ◽  
Chemical Shift Anisotropy ◽  
Lattice Relaxation ◽  
Lattice Relaxation Time ◽  
Spin Lattice Relaxation ◽  
Spin Lattice ◽  
Structure And Dynamics ◽  
Molecular Correlation ◽  
Anisotropy Tensor

The correlation between the structure and dynamics of omeprazole is portrayed by extracting CSA parameters through the 13C 2DPASS CP-MAS SSNMR experiment, site specific spin–lattice relaxation time by Torchia CP experiment, and calculation of the molecular correlation time.

Analysis of Spin Polarisation Transients in Periodically Photo-excited Triplet States

1975 ◽  
Vol 30 (5) ◽  
pp. 571-582 ◽  
Author(s):  
C. J. Winscom
Keyword(s):  
Lattice Relaxation ◽  
Rectangular Pulse ◽  
Decay Rates ◽  
Spin Lattice Relaxation ◽  
Pulse Excitation ◽  
Triplet States ◽  
Relaxation Rates ◽  
Spin Sublevel ◽  
Spin Lattice ◽  
The Individual

Abstract The behaviour of spin sublevel populations with time following periodic photo-excitation is ex-amined. The treatment is limited to conditions of magnetic field strength and temperature for which the spin lattice relaxation rates dominate the individual spin sublevel decay rates. The response of the system to three modes of excitation is considered: (i) continuous excitation using a time-independent intensity (ii) periodic rectangular pulse excitation and (iii) periodic waveform excitation. A convenient correspondence between the various forms of solutions is pointed out. The requirements of an experiment to determine spin-lattice relaxation rates in organic triplets at 77 K are discussed.

scholarly journals P∩N Bridged Cu(I) Dimers Featuring Both TADF and Phosphorescence. From Overview towards Detailed Case Study of the Excited Singlet and Triplet States

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3415
Author(s):  
Thomas Hofbeck ◽  
Thomas A. Niehaus ◽  
Michel Fleck ◽  
Uwe Monkowius ◽  
Hartmut Yersin
Keyword(s):  
Quantum Yield ◽  
Decay Time ◽  
Relaxation Times ◽  
Lattice Relaxation ◽  
Photo Luminescence ◽  
Delayed Fluorescence ◽  
Spin Lattice Relaxation ◽  
Zero Field ◽  
Triplet States ◽  
Spin Lattice

We present an overview over eight brightly luminescent Cu(I) dimers of the type Cu2X2(P∩N)3 with X = Cl, Br, I and P∩N = 2-diphenylphosphino-pyridine (Ph2Ppy), 2-diphenylphosphino-pyrimidine (Ph2Ppym), 1-diphenylphosphino-isoquinoline (Ph2Piqn) including three new crystal structures (Cu2Br2(Ph2Ppy)3 1-Br, Cu2I2(Ph2Ppym)3 2-I and Cu2I2(Ph2Piqn)3 3-I). However, we mainly focus on their photo-luminescence properties. All compounds exhibit combined thermally activated delayed fluorescence (TADF) and phosphorescence at ambient temperature. Emission color, decay time and quantum yield vary over large ranges. For deeper characterization, we select Cu2I2(Ph2Ppy)3, 1-I, showing a quantum yield of 81%. DFT and SOC-TDDFT calculations provide insight into the electronic structures of the singlet S1 and triplet T1 states. Both stem from metal+iodide-to-ligand charge transfer transitions. Evaluation of the emission decay dynamics, measured from 1.2 ≤ T ≤ 300 K, gives ∆E(S1-T1) = 380 cm−1 (47 meV), a transition rate of k(S1→S0) = 2.25 × 106 s−1 (445 ns), T1 zero-field splittings, transition rates from the triplet substates and spin-lattice relaxation times. We also discuss the interplay of S1-TADF and T1-phosphorescence. The combined emission paths shorten the overall decay time. For OLED applications, utilization of both singlet and triplet harvesting can be highly favorable for improvement of the device performance.

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