minority carrier lifetimes
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Minority carrier lifetimes in digitally-grown, narrow-gap, AlInAsSb alloys

Applied Physics Letters ◽

10.1063/5.0074304 ◽

2021 ◽

Vol 119 (25) ◽

pp. 251102

Author(s):

A. J. Muhowski ◽

S. D. March ◽

S. J. Maddox ◽

D. Wasserman ◽

S. R. Bank

Keyword(s):

Minority Carrier ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes

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The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

10.1109/wipdaasia51810.2021.9656062 ◽

2021 ◽

Author(s):

Ruijun Zhang ◽

Rongdun Hong ◽

Jiafa Cai ◽

Xiaping Chen ◽

Dingqu Lin ◽

...

Keyword(s):

Minority Carrier ◽

Hydrogen Annealing ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes

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Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si

Journal of Applied Physics ◽

10.1063/5.0022317 ◽

2021 ◽

Vol 129 (1) ◽

pp. 015106

Author(s):

Z. Taghipour ◽

A. W. K. Liu ◽

J. M. Fastenau ◽

D. Lubyshev ◽

S. A. Nelson ◽

...

Keyword(s):

Minority Carrier ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes

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RF Read-Out of Minority Carrier Lifetimes in Micro-Scale Infrared Materials

Conference on Lasers and Electro-Optics ◽

10.1364/cleo_si.2019.sth4o.4 ◽

2019 ◽

Author(s):

S. Dev ◽

Y. Wang ◽

K. Kim ◽

M. Zamiri ◽

C. Kadlec ◽

...

Keyword(s):

Minority Carrier ◽

Micro Scale ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes ◽

Infrared Materials

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Impact of the Activation of Carbon Vacancies at High Temperatures on the Minority Carrier Lifetimes in the Intrinsic Area of 4H-SiC PiN Rectifier

2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) ◽

10.1109/asdam.2018.8544472 ◽

2018 ◽

Author(s):

B. Lechner ◽

Y. Huang ◽

G. Wachutka

Keyword(s):

High Temperatures ◽

Minority Carrier ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes

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Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.08.022 ◽

2017 ◽

Vol 111 ◽

pp. 1211-1216

Author(s):

T. Tansel ◽

M. Hostut ◽

Y. Ergun

Keyword(s):

Minority Carrier ◽

Infrared Range ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes

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Aspects of type-II superlattice infrared detectors: Minority carrier lifetimes and conductivity effective masses

2017 IEEE Photonics Conference (IPC) ◽

10.1109/ipcon.2017.8116050 ◽

2017 ◽

Author(s):

David Z. Ting ◽

Linda Hoglund ◽

Alexander Soibel ◽

Arezou Khoshakhlagh ◽

Sam A. Keo ◽

...

Keyword(s):

Infrared Detectors ◽

Minority Carrier ◽

Type Ii ◽

Carrier Lifetimes ◽

Effective Masses ◽

Type Ii Superlattice ◽

Minority Carrier Lifetimes

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Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ω cm n -Type Silicon Wafers

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700235 ◽

2017 ◽

Vol 11 (11) ◽

pp. 1700235 ◽

Author(s):

Boris A. Veith-Wolf ◽

Jan Schmidt

Keyword(s):

Minority Carrier ◽

Silicon Wafers ◽

Carrier Lifetimes ◽

Type Silicon ◽

Minority Carrier Lifetimes

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Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions

Energy Procedia ◽

10.1016/j.egypro.2017.09.348 ◽

2017 ◽

Vol 124 ◽

pp. 786-793 ◽

Author(s):

Rune Søndenå ◽

Birgit Ryningen ◽

Mari Juel

Keyword(s):

Minority Carrier ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes

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V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.67 ◽

2017 ◽

Vol 897 ◽

pp. 67-70 ◽

Author(s):

Tetsuya Miyazawa ◽

Takeshi Tawara ◽

Hidekazu Tsuchida

Keyword(s):

Epitaxial Growth ◽

Minority Carrier ◽

Carrier Lifetimes ◽

Hcl Gas ◽

Minority Carrier Lifetimes ◽

Epitaxial growth of 4H-SiC with intentional V or Ti doping was performed to obtain short minority carrier lifetimes, using VCl4 or TiCl4 as the doping sources. The doping efficiencies and quality of the epilayers were compared for H2+SiH4+C3H8 and H2+SiH4+C3H8+HCl gas systems. The addition of V or Ti in highly N-doped epilayer demonstrated very short minority carrier lifetimes of 20-30 ns at 250°C.

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