Solar cells based on inkjet-printed layer polymer

In recent years, based on organic–inorganic hybrid solar cells the p-type conducting polymer poly (3,4-ethylenedioxythiophene): poly styrene sulfonate (PEDOT: PSS) and n-type silicon (Si) have attracted a lot of attention. We describe an efficient hybrid solar cell based on PEDOT from this perspective: The simplest and most cost-effective method is to use PSS and a planar Si substrate (1 0 0) fabrication method effective techniques for experimentation Drop casting was used to construct PSS at temperatures, solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT: below 100 degrees Celsius. The Si/PEDOT interface prevents electrons from migrating to the anode in n-type silicon and serves diffused p-n junctions as a low-temperature alternative The devices take the consequence of silicon’s absorption and transfer of light capabilities while combining them with organics’ ease of manufacture. PEDOT: PSS and PEDOT: PSS interface properties hermetic Psi were studied. The structural, optical and morphological properties in addition to electrical PSS is a property of PEDOT. were studied, the effectiveness of The flawlessly matching contact between the PEDOT: PSS film and the tight silicon can be attributed to conversion. Obtaining Silver pave efficiency is a glowing future approach in order to attain maximum efficiency, low-cost solar cells.

Vertically Aligned n-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries

Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. In this work, to improve the performance of silicon anodes, a vertically aligned n-type silicon nanowire array (n-SiNW) was fabricated using a well-controlled, top-down nano-machining technique by combining photolithography and inductively coupled plasma reactive ion etching (ICP-RIE) at a cryogenic temperature. The array of nanowires ~1 µm in diameter and with the aspect ratio of ~10 was successfully prepared from commercial n-type silicon wafer. The half-cell LIB with free-standing n-SiNW electrode exhibited an initial Coulombic efficiency of 91.1%, which was higher than the battery with a blank n-silicon wafer electrode (i.e., 67.5%). Upon 100 cycles of stability testing at 0.06 mA cm−2, the battery with the n-SiNW electrode retained 85.9% of its 0.50 mAh cm−2 capacity after the pre-lithiation step, whereas its counterpart, the blank n-silicon wafer electrode, only maintained 61.4% of 0.21 mAh cm−2 capacity. Furthermore, 76.7% capacity retention can be obtained at a current density of 0.2 mA cm−2, showing the potential of n-SiNW anodes for high current density applications. This work presents an alternative method for facile, high precision, and high throughput patterning on a wafer-scale to obtain a high aspect ratio n-SiNW, and its application in LIBs.