Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ω cm n -Type Silicon Wafers

2017 ◽  
Vol 11 (11) ◽  
pp. 1700235 ◽  
Author(s):  
Boris A. Veith-Wolf ◽  
Jan Schmidt
Keyword(s):  
Minority Carrier ◽  
Silicon Wafers ◽  
Carrier Lifetimes ◽  
Type Silicon ◽  
Minority Carrier Lifetimes

Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type Silicon

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3054-3058 ◽  
Author(s):  
Hak Kee Jung ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi
Keyword(s):  
Auger Recombination ◽  
Theoretical Study ◽  
Minority Carrier ◽  
Carrier Lifetimes ◽  
Type Silicon ◽  
Minority Carrier Lifetimes

InSb: A Key Material for IR Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
S. R. Jost ◽  
V. F. Meikleham ◽  
T. H. Myers
Keyword(s):  
Minority Carrier ◽  
Bulk Material ◽  
Device Performance ◽  
Injection Device ◽  
Ir Detector ◽  
Material Parameters ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Growth Technology ◽  
Device Technology

ABSTRACTInSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.

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