hyperthermal ions
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2004 ◽  
Vol 561 (2-3) ◽  
pp. 147-153 ◽  
Author(s):  
K Vanormelingen ◽  
B Degroote ◽  
H Pattyn ◽  
A Vantomme

2002 ◽  
Vol 42 (2-4) ◽  
pp. 451-457 ◽  
Author(s):  
A.V. Krasheninnikov ◽  
E. Salonen ◽  
K. Nordlund ◽  
J. Keinonen ◽  
C.H. Wu

2001 ◽  
Vol 696 ◽  
Author(s):  
J.M. Pomeroy ◽  
B.H. Cooper ◽  
J.D. Brock

AbstractSTM analysis of thin copper films grown on Cu(111) and Cu(100) at room temperature using hyperthermal ions reveals several morphological features not present in thermally grown films. Hyperthermal deposition of thin films has become a popular industrial technique due to observed decreases in film roughness and stress with increased grain sizes, but the link between incidence energy and these properties is poorly understood. Using a sophisticated molecular dynamics (MD) simulation, morphologies observed in experimentally grown films are correlated with the activation of hyperthermal atomistic mechanisms in the MD. Previous work has provided strong evidence for activation of adatom-vacancy pair production near 20 eV on Cu(111). Evidence will be presented here for the activation of sputter erosion near 40 eV. A proposal for quantifying the effect of energy on nucleation density by modifying the flux term in mean field nucleation theory will be presented. Other processes which directly contribute to smooth growth, such as atomic insertion near 10eV, have been proposed but are more difficult to correlate with the data due to their subtle morphological signatures.


2001 ◽  
Vol 15 (17) ◽  
pp. 1625-1633 ◽  
Author(s):  
V. V. Komarov ◽  
A. M. Popova ◽  
I. O. Stureiko ◽  
L. Schmidt ◽  
H. Jungclas

1989 ◽  
Vol 39 (15) ◽  
pp. 10503-10513 ◽  
Author(s):  
R. L. McEachern ◽  
D. M. Goodstein ◽  
B. H. Cooper

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