Fundamentals of Metal Film Deposition With Hyperthermal Ions

2000 ◽  
Author(s):  
Barbara H. Cooper
1999 ◽  
Vol 15 (3) ◽  
pp. 225-229 ◽  
Author(s):  
T. Takamura ◽  
J. Suzuki ◽  
C. Yamada ◽  
K. Sumiya ◽  
K. Sekine

1999 ◽  
Author(s):  
Seok Chung ◽  
Jun Keun Chang ◽  
Dong Chul Han

Abstract To make some MF.MS devices such as sensors and actuators be useful in the medical application, it is required to integrate this devices with power or sensor lines and to keep the hole devices biocompatible. Integrating micro machined sensors and actuators with conventional copper lines is incompatible because the thin copper lines are not easy to handle in the mass production. To achieve the compatibility of wiring method between MEMS devices, we developed the thin metal film deposition process that coats micropattered thin copper films on the non silicon-wafer substrate. The process was developed with the custom-made three-dimensional thin film sputter/evaporation system. The system consists of process chamber, two branch chambers, substrate holder unit and linear/rotary motion feedthrough. Thin metal film was deposited on the biocompatible polymer, polyurethane (PellethaneR) and silicone, catheter that is 2 mm in diameter and 1,000 mm in length. We deposited Cr/Cu and Ti/Cu layer and made a comparative study of the deposition processes, sputtering and evaporation. The temperature of both the processes were maintained below 100°C, for the catheter not melting during the processes. To use the films as signal lines connect the signal source to the actuator on the catheter tip, we machined the films into desired patterns with the eximer laser. In this paper, we developed the thin metal film deposition system and processes for the biopolymeric substrate used in the medical MEMS devices.


1989 ◽  
Vol 158 ◽  
Author(s):  
R. Nowak ◽  
P. Hess

ABSTRACTThe mechanism of metal film deposition from carbonyls as precursors is discussed in detail. It is shown that different species produced by UV laser irradiation in the gas phase contribute to film growth. Highly reactive species such as metal atoms may be important during the nucleation phase, whereas more stable carbonyls are responsible for the main growth process. This indicates that the main decarbonylation effect occurs at the surface. The higher level of impurity incorporation in chromium films in comparison with nickel films is explained by the relative position of the Fermi level in the d-band of Ni and Cr with respect to the 2π* level of CO, which favors CO bond dissociation in the case of chromium.


1990 ◽  
Vol 203 ◽  
Author(s):  
Hongwen Li ◽  
Robert R. Reeves

ABSTRACTA novel low temperature CVD process - atom reaction CVD process for metal film depositions has been developed by using hydrogen atoms reacting with metal compounds. High purity copper films, with low resistivity of ∼ 2 μΩ cm, good step coverage to submicron holes and good adhesion to various substrates, were obtained by using this process with Cu(HFA)2 source at substrate temperatures below 150 °C.


1982 ◽  
Vol 50 (10) ◽  
pp. 950-951 ◽  
Author(s):  
G. Krishna Mohan ◽  
Vinod K. Tondon ◽  
P. B. Goel

2011 ◽  
Vol 8 (4) ◽  
pp. 346-352 ◽  
Author(s):  
Alexander G. Rudavets ◽  
Alexey N. Ryabinkin ◽  
Alexander O. Serov

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