Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50245-50249 ◽  
Author(s):  
Yingdong Tian ◽  
Yun Zhang ◽  
Jianchang Yan ◽  
Xiang Chen ◽  
Junxi Wang ◽  
...  

We demonstrate an optically pumped AlGaN-based laser at 272 nm with two-step etched facets. Compared with a laser with cleaved facets, the laser with etched facets had a lower threshold and higher differential quantum efficiency.

1986 ◽  
Vol 49 (10) ◽  
pp. 549-551 ◽  
Author(s):  
B. Valk ◽  
M. M. Salour ◽  
G. Munns ◽  
H. Morkoç

2015 ◽  
Vol 23 (9) ◽  
pp. 11334 ◽  
Author(s):  
Yingdong Tian ◽  
Jianchang Yan ◽  
Yun Zhang ◽  
Xiang Chen ◽  
Yanan Guo ◽  
...  

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 355-360 ◽  
Author(s):  
Stephen Bennett ◽  
Christopher M. Snowden ◽  
Stavros Iezekiel

A theoretical (using rate equations) and experimental study of the nonlinear dynamics of a distributed feedback multiple quantum well laser diode is presented. The analysis is performed under direct modulation. Period doubling and period tripling are identified in both the measurements and simulations. Period doubling is found over a wide range of modulation frequencies in the laser. Computational results using rate equations show good agreement with the experimental results.


1997 ◽  
Vol 3 (2) ◽  
pp. 315-319 ◽  
Author(s):  
N. Tessler ◽  
S. Marcinkevicius ◽  
U. Olin ◽  
C.K.V. Silfvenius ◽  
B.F. Stalnacke ◽  
...  

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