Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets
Keyword(s):
We demonstrate an optically pumped AlGaN-based laser at 272 nm with two-step etched facets. Compared with a laser with cleaved facets, the laser with etched facets had a lower threshold and higher differential quantum efficiency.
2012 ◽
Vol 24
(17)
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pp. 1561-1563
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1997 ◽
Vol 3
(2)
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pp. 315-319
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