grade silicon
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2022 ◽  
Vol 141 ◽  
pp. 106438
Author(s):  
Yunfei He ◽  
Wenhui Ma ◽  
Aimin Xing ◽  
Mingshi Hu ◽  
Shicheng Liu ◽  
...  

2022 ◽  
Vol 234 ◽  
pp. 111410
Author(s):  
N. Dasilva-Villanueva ◽  
S. Catalán-Gómez ◽  
D. Fuertes Marrón ◽  
J.J. Torres ◽  
M. García-Corpas ◽  
...  

2021 ◽  
pp. 197-206
Author(s):  
Hamid Arastoopour ◽  
Dimitri Gidaspow ◽  
Robert W. Lyczkowski

2021 ◽  
Vol 7 (2) ◽  
pp. 33-43
Author(s):  
Vladimir N. Jarkin ◽  
Oleg A. Kisarin ◽  
Tatyana V. Kritskaya

Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including the conversion of technical grade silicon (synthesized by carbon-thermal reduction of quartzites) to trichlorosilane followed by rectification and hydrogen reduction. The cost of product silicon can be cut down by reducing the trichlorosilane synthesis costs through process and equipment improvement. Advantages, drawbacks and production cost reduction methods have been considered with respect to four common trichlorosilane synthesis processes: hydrogen chloride exposure of technical grade silicon (direct chlorination, DC), homogeneous hydration of tetrachlorosilane (conversion), tetrachlorosilane and hydrogen exposure of silicon (hydro chlorination silicon, HC), and catalyzed tetrachlorosilane and dichlorosilane reaction (redistribution of anti-disproportioning reaction). These processes remain in use and are permanently improved. Catalytic processes play an important role on silicon surface, and understanding their mechanisms can help find novel applications and obtain new results. It has been noted that indispensable components of various equipment and process designs are recycling steps and combined processes including active distillation. They provide for the most complete utilization of raw trichlorosilane, increase the process yield and cut down silicon cost.


2021 ◽  
Vol 16 (06) ◽  
pp. P06019
Author(s):  
A. Aguilar-Arevalo ◽  
D. Amidei ◽  
D. Baxter ◽  
G. Cancelo ◽  
B.A. Cervantes Vergara ◽  
...  

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