noise power density
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2021 ◽  
Vol 2103 (1) ◽  
pp. 012232
Author(s):  
D S Loginov ◽  
A V Baskakova ◽  
V G Litvinov ◽  
T A Kholomina ◽  
N B Rybin ◽  
...  

Abstract The results of spectral noise power density measurements of reed switches 10 samples with and without Au-Ru coating are analyzed. The dependences of the spots area formed during switching tests on the electrodes on various noise parameters are constructed.


2016 ◽  
Vol 24 (02n03) ◽  
pp. 367-383 ◽  
Author(s):  
TIANQUAN FENG ◽  
MING YI

We numerically investigate the transmission of time-modulated random point trains in a conductance-based neuron model by including shot noise described as additive noise trains. The results show that additive noise trains can induce neuron responses exhibiting correlation with the temporally modulated random point trains. In addition, the additive noise power density can be increased up to an optimal value where the output signal-noise ratio (SNR) reaches a maximum value. This property of noise-enhanced transmission of random point trains can be related to the stochastic resonance (SR) phenomenon. More interestingly, we find that the SNR gain can exceed unity and can also be optimized by tuning the average rate of the input random point trains. The present study illustrates the potential to utilize the additive noise and temporally modulated random point trains for optimizing the response of the neuron to inputs, as well as a guidance in the design of information processing devices to random neuron spiking.


2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.


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