Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Solar-Blind Photodetector with Lower Dark Current and Higher Ilight/Idark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method

2021 ◽  
Vol 21 (3) ◽  
pp. 1703-1710
Author(s):  
Pei-Jiang Cao ◽  
Qing Wang ◽  
Ch. N. Rao ◽  
Shun Han ◽  
Wang-Ying Xu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Dark Current ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Cutoff Wavelength ◽  
Deposition Method ◽  
Solar Blind ◽  
Key Features ◽  
Quartz Substrates

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 °C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (Idark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger Ilight/Idark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.

A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

1999 ◽  
Vol 595 ◽  
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

AbstractIn this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

unneling effects in InAs/GaInSb superlattice infrared photodiodes

1997 ◽  
Vol 484 ◽  
Author(s):  
U. Weimar ◽  
F. Fuchs ◽  
E. Ahlswede ◽  
J. Schmitz ◽  
W. Pletschen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetic Fields ◽  
Electric Field ◽  
Dark Current ◽  
Reverse Bias ◽  
Cutoff Wavelength ◽  
Optical And Electrical Properties ◽  
Interband Tunneling ◽  
Infrared Photodiodes ◽  
Device Properties

AbstractThe optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 pim are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.

scholarly journals A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

2000 ◽  
Vol 5 (S1) ◽  
pp. 577-583
Author(s):  
Anand V. Sampath ◽  
Mira Misra ◽  
Kshitij Seth ◽  
Yuri. Fedyunin ◽  
Hock M. Ng ◽  
...  
Keyword(s):  
Comparative Study ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Etch Pits ◽  
Sapphire Substrates ◽  
Fabrication And Characterization

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

Air-Breathing Membraneless Laminar Flow Fuel Cell With Flow-Through Anode

2011 ◽  
Author(s):  
Seyed Ali Mousavi Shaegh ◽  
Nam-Trung Nguyen ◽  
Siew Hwa Chan
Keyword(s):  
Fuel Cell ◽  
Laminar Flow ◽  
Power Density ◽  
Maximum Power Density ◽  
Reference Case ◽  
Higher Power ◽  
Flow Through ◽  
Fabrication And Characterization ◽  
Porous Anode

This paper reports the fabrication and characterization of a new concept of flow-through anode for membraneless laminar flow fuel cell (LFFC). To establish a reference case, a fuel cell with flow over and planar anode was fabricated as well. Experimental results indicated that maximum power density was improved from 17 mW/cm2 in planar design to 23 mW/cm2 using the flow-through design. The higher power density of flow-through design is an indicative of higher fuel utilization in the porous anode. Images of the flow obtained experimentally showed that mixing was reduced at the liquid-liquid interface in the channel with flow-through anode leading to increased fuel concentration over anode.

Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate

2004 ◽  
Vol 831 ◽  
Author(s):  
Yasuhiro Shibata ◽  
Atsushi Motogaito ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Youichiro Ohuchi ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Dark Current ◽  
Signal To Noise Ratio ◽  
Temperature Stability ◽  
Dark Current Density ◽  
Drastic Reduction ◽  
Uv Detectors ◽  
Low Dislocation Density ◽  
Fabrication And Characterization

ABSTRACTGaN ultraviolet (UV) detectors were fabricated on a freestanding GaN substrate with low dislocation density. The resulting dark current density was below 1 nA/cm-2 at -8 V reverse bias, which was about 3 orders of magnitude lower than that of a similar detector made on a sapphire substrate. Moreover, the ideality factor was nearer to unity than the device on a sapphire substrate. In addition, by comparing the GaN-based device to a commonly used Si photodetector, we found that the GaN device had a lower signal-to-noise ratio and greater temperature stability. Therefore, we found a drastic reduction of dark current by using GaN freestanding substrates and so the GaN substrate produced a more effective detector than the sapphire substrate.

Fabrication and characterization of Mg-doped ε-Ga2O3 solar-blind photodetector

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109425
Author(s):  
Zeng Liu ◽  
Yuanqi Huang ◽  
Haoran Li ◽  
Chuang Zhang ◽  
Weiyu Jiang ◽  
...  
Keyword(s):  
Solar Blind ◽  
Fabrication And Characterization ◽  
Mg Doped
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