2016 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

236

(FIVE YEARS 0)

H-INDEX

23

(FIVE YEARS 0)

Published By IEEE

9781509039029

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Experimental study on hole and electron effective masses in inversion layers of Ge (100), (110) and (111) p- and n-MOSFETs

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838405 ◽

2016 ◽

Author(s):

R. Zhang ◽

J. Li ◽

Z. Zheng ◽

X. Yu ◽

W. Dong ◽

...

Keyword(s):

Experimental Study ◽

Effective Masses

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Compact models of negative-capacitance FinFETs: Lumped and distributed charge models

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838514 ◽

2016 ◽

Author(s):

Juan P. Duarte ◽

Sourabh Khandelwal ◽

Asif I. Khan ◽

Angada Sachid ◽

Yen-Kai Lin ◽

...

Keyword(s):

Negative Capacitance ◽

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Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838456 ◽

2016 ◽

Author(s):

H. Mertens ◽

R. Ritzenthaler ◽

A. Chasin ◽

T. Schram ◽

E. Kunnen ◽

...

Keyword(s):

Work Function ◽

Si Nanowire ◽

Cmos Transistors ◽

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Experimental demonstration of nanomagnet networks as hardware for Ising computing

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838539 ◽

2016 ◽

Author(s):

Punyashloka Debashis ◽

Rafatul Faria ◽

Kerem Y. Camsari ◽

Joerg Appenzeller ◽

Supriyo Datta ◽

...

Keyword(s):

Experimental Demonstration

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Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838466 ◽

2016 ◽

Author(s):

J. Ma ◽

Z. Chai ◽

W. Zhang ◽

B. Govoreanu ◽

J. F. Zhang ◽

...

Keyword(s):

Failure Mechanisms ◽

Memory Window ◽

Critical Regions

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Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838403 ◽

2016 ◽

Author(s):

Hiroyuki Ota ◽

Tsutomu Ikegami ◽

Junichi Hattori ◽

Koichi Fukuda ◽

Shinji Migita ◽

...

Keyword(s):

Device Simulation ◽

Negative Capacitance ◽

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General relationship for cation and anion doping effects on ferroelectric HfO2 formation

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838477 ◽

2016 ◽

Author(s):

L. Xu ◽

S. Shibayama ◽

K. Izukashi ◽

T. Nishimura ◽

T. Yajima ◽

...

Keyword(s):

General Relationship ◽

Anion Doping ◽

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Embedded flash technology for automotive applications

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838501 ◽

2016 ◽

Author(s):

Tadaaki Yamauchi ◽

Yasuo Yamaguchi ◽

Takashi Kono ◽

Hideto Hidaka

Keyword(s):

Automotive Applications ◽

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Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838435 ◽

2016 ◽

Author(s):

V. Milo ◽

G. Pedretti ◽

R. Carboni ◽

A. Calderoni ◽

N. Ramaswamy ◽

...

Keyword(s):

Neural Networks ◽

Time Rate ◽

Dependent Plasticity ◽

Rate Dependent ◽

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FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838437 ◽

2016 ◽

Author(s):

O. Gluschenkov ◽

Z. Liu ◽

H. Niimi ◽

S. Mochizuki ◽

J. Fronheiser ◽

...

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