2016 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

236

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781509039029

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Circuits and systems for energy efficient smart wearables

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838359 ◽

2016 ◽

Cited By ~ 2

Author(s):

Ajit Sharma ◽

Tarkesh Pande ◽

Praveen Aroul ◽

Karthik Soundarapandian ◽

Wai Lee

Keyword(s):

Energy Efficient

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Nitridation of GaN surface for power device application: A first-principles study

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838552 ◽

2016 ◽

Cited By ~ 4

Author(s):

Zhaofu Zhang ◽

Baikui Li ◽

Xi Tang ◽

Qingkai Qian ◽

Mengyuan Hua ◽

...

Keyword(s):

First Principles ◽

Power Device ◽

Device Application ◽

First Principles Study

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Experimental demonstration of short and long term synaptic plasticity using OxRAM multi k-bit arrays for reliable detection in highly noisy input data

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838433 ◽

2016 ◽

Cited By ~ 11

Author(s):

T. Werner ◽

E. Vianello ◽

O. Bichler ◽

A. Grossi ◽

E. Nowak ◽

...

Keyword(s):

Synaptic Plasticity ◽

Input Data ◽

Experimental Demonstration ◽

Noisy Input ◽

Reliable Detection ◽

Short And Long Term

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Advanced integrated sensor and layer transfer technologies for wearable bioelectronics

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838362 ◽

2016 ◽

Cited By ~ 1

Author(s):

A. Alharbi ◽

B. Nasri ◽

T. Wu ◽

D. Shahrjerdi

Keyword(s):

Layer Transfer ◽

Integrated Sensor

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Fast-trap characterization in Ge CMOS using Sub-1 ns ultra-fast measurement system

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838519 ◽

2016 ◽

Cited By ~ 4

Author(s):

X. Yu ◽

B. Chen ◽

R. Cheng ◽

Y. Qu ◽

J. Han ◽

...

Keyword(s):

Measurement System ◽

Fast Measurement

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Demonstrating performance improvement of complementary TFET circuits by Ion enhancement based on isoelectronic trap technology

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838453 ◽

2016 ◽

Cited By ~ 6

Author(s):

T. Mori ◽

H. Asai ◽

J. Hattori ◽

K. Fukuda ◽

S. Otsuka ◽

...

Keyword(s):

Performance Improvement

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Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838435 ◽

2016 ◽

Cited By ~ 29

Author(s):

V. Milo ◽

G. Pedretti ◽

R. Carboni ◽

A. Calderoni ◽

N. Ramaswamy ◽

...

Keyword(s):

Neural Networks ◽

Spike Time ◽

Time Rate ◽

Dependent Plasticity ◽

Rate Dependent ◽

Hybrid Cmos

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FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838437 ◽

2016 ◽

Cited By ~ 11

Author(s):

O. Gluschenkov ◽

Z. Liu ◽

H. Niimi ◽

S. Mochizuki ◽

J. Fronheiser ◽

...

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Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838375 ◽

2016 ◽

Cited By ~ 33

Author(s):

Y. Kagawa ◽

N. Fujii ◽

K. Aoyagi ◽

Y. Kobayashi ◽

S. Nishi ◽

...

Keyword(s):

Cmos Image Sensor ◽

Image Sensor

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Experimental study on hole and electron effective masses in inversion layers of Ge (100), (110) and (111) p- and n-MOSFETs

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838405 ◽

2016 ◽

Author(s):

R. Zhang ◽

J. Li ◽

Z. Zheng ◽

X. Yu ◽

W. Dong ◽

...

Keyword(s):

Experimental Study ◽

Effective Masses

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2016 IEEE International Electron Devices Meeting (IEDM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Circuits and systems for energy efficient smart wearables

Nitridation of GaN surface for power device application: A first-principles study

Experimental demonstration of short and long term synaptic plasticity using OxRAM multi k-bit arrays for reliable detection in highly noisy input data

Advanced integrated sensor and layer transfer technologies for wearable bioelectronics

Fast-trap characterization in Ge CMOS using Sub-1 ns ultra-fast measurement system

Demonstrating performance improvement of complementary TFET circuits by Ion enhancement based on isoelectronic trap technology

Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity

FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys

Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding

Experimental study on hole and electron effective masses in inversion layers of Ge (100), (110) and (111) p- and n-MOSFETs

2016 IEEE International Electron Devices Meeting (IEDM)
Latest Publications