ultra high vacuum chamber
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2021 ◽  
Vol 40 ◽  
pp. 101898
Author(s):  
N. Cooper ◽  
L.A. Coles ◽  
S. Everton ◽  
I. Maskery ◽  
R.P. Campion ◽  
...  


Optik ◽  
2017 ◽  
Vol 130 ◽  
pp. 806-812
Author(s):  
Xinlong Chen ◽  
Guanghua Tang ◽  
Shumeng Wang ◽  
Benkang Chang


2015 ◽  
Vol 86 (9) ◽  
pp. 095110 ◽  
Author(s):  
Carl-Johan Englund ◽  
Marcus Agåker ◽  
Pierre Fredriksson ◽  
Anders Olsson ◽  
Niklas Johansson ◽  
...  


2015 ◽  
Vol 24 (3) ◽  
pp. 035003 ◽  
Author(s):  
A Dolgov ◽  
O Yakushev ◽  
A Abrikosov ◽  
E Snegirev ◽  
V M Krivtsun ◽  
...  


2014 ◽  
Vol 85 (2) ◽  
pp. 025107 ◽  
Author(s):  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
Sumant Katiyal ◽  
T. Shripathi ◽  
R. Hippler


2011 ◽  
Vol 54 (3) ◽  
pp. 155-157
Author(s):  
Kazuhiro TAMURA ◽  
Haruo OHKUMA ◽  
Shiro TAKANO ◽  
Mitsuhiro MASAKI ◽  
Akira MOCHIHASHI


2006 ◽  
Vol 527-529 ◽  
pp. 1023-1026 ◽  
Author(s):  
S. Nie ◽  
R.M. Feenstra

Scanning tunneling microscopy and spectroscopy have been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by annealing in an ultra-high vacuum chamber at 600−800°C under 1×10-7 Torr pressure of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV relative to the Fermi level, which lie outside the band gap region but are inhomogeneously broadened such that they extend into the gap, together with additional features within the band gap.



Pramana ◽  
2005 ◽  
Vol 65 (5) ◽  
pp. 881-891 ◽  
Author(s):  
S. Ramasamy ◽  
D. J. Smith ◽  
P. Thangadurai ◽  
K. Ravichandran ◽  
T. Prakash ◽  
...  




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