torr pressure
Recently Published Documents


TOTAL DOCUMENTS

34
(FIVE YEARS 0)

H-INDEX

12
(FIVE YEARS 0)

2011 ◽  
Vol 141 (5) ◽  
pp. 633-640 ◽  
Author(s):  
Selim Alayoglu ◽  
Franklin Tao ◽  
Virginia Altoe ◽  
Colin Specht ◽  
Zhongwei Zhu ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 25 (28) ◽  
pp. no-no
Author(s):  
K. Y. S. NG ◽  
D. N. BELTON ◽  
S. J. SCHMIEG ◽  
G. B. FISHER

2008 ◽  
Vol 1109 ◽  
Author(s):  
Tahir Zaidi ◽  
Muhammad Jamil ◽  
Andrew Melton ◽  
Nola Li ◽  
William E. Fenwick ◽  
...  

AbstractIn this paper effects of NH3 doping on ZnO thin films grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates using diethyl zinc (DEZn) and O2 precursors and N2 as the carrier gas have been studied. NH3 flow rates were varied from 0.1% to 4% in the growth runs. All the runs were done at 500°C at 10 Torr pressure.The XRD measurements show a single ZnO (002) peak. Raman data for the samples confirms presence of ZnO:N modes at 275cm−1, 510cm−1 and 575 cm−1 and 645cm−1. The PL results for Zn rich films show weak broad peaks centered at 480nm and 650nm with no ZnO band edge emission, while oxygen rich films show weak ZnO band edge emission and a strong broad orange peak centered at 650nm. Hall effect measurements indicate that all of the as-grown films are highly resistive. Some are weakly p-type with carrier concentration of 4.24 × 1014 cm−3 and mobility of 16.55 cm2/Vs. Annealing in N2 ambient for 60 minutes at 800°C enhances the PL band edge emission and converts all the films to highly conducting n-type, with carrier concentration on the order of 8 × 1018 cm−3, mobility on the order of 12 cm2/Vs and resistivity of 0.063 Ω-cm.


2006 ◽  
Vol 527-529 ◽  
pp. 1023-1026 ◽  
Author(s):  
S. Nie ◽  
R.M. Feenstra

Scanning tunneling microscopy and spectroscopy have been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by annealing in an ultra-high vacuum chamber at 600−800°C under 1×10-7 Torr pressure of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV relative to the Fermi level, which lie outside the band gap region but are inhomogeneously broadened such that they extend into the gap, together with additional features within the band gap.


2005 ◽  
Vol 109 (28) ◽  
pp. 13619-13622 ◽  
Author(s):  
Anderson L. Marsh ◽  
Kevin A. Becraft ◽  
Gabor A. Somorjai

2005 ◽  
Vol 865 ◽  
Author(s):  
Ankur A. Kadam ◽  
Anant H. Jahagirdar ◽  
Neelkanth G. Dhere

AbstractAnalysis of CuIn1-x Gax Se2-y Sy (CIGSS) absorber and molybdenum back contact layer was carried out to understand the changes in the microstructure of CIGSS layer as a function of the deposition conditions and the nature of stress in the underlying Mo film. All the depositions were carried out on 10 cm x 10 cm glass substrates. Compressive and tensile stressed molybdenum films were prepared with combinations of deposition parameters; power and pressure. CIGSS absorber layer was prepared by depositing metallic precursors using DC magnetron sputtering followed by selenization and sulfurization. Molybdenum layer deposited at 300 W and 3 x 10 Torr pressure produced compressive stress with compact, well adherent and lower sheet resistance as compared to the tensile stressed film deposited at 200 W and 5 x 10 Torr. The crystallinity of the CIGSS film was found not to depend on the stress in the underlying molybdenum film. However, the adhesion at the Mo/CIGSS as well as gallium profile at the Mo/CIGSS interface were affected by the stress.


2001 ◽  
Vol 86 (19) ◽  
pp. 4330-4333 ◽  
Author(s):  
Keith B. Rider ◽  
Kevin S. Hwang ◽  
Miquel Salmeron ◽  
Gabor A. Somorjai

2000 ◽  
Vol 54 (3) ◽  
pp. 331-340 ◽  
Author(s):  
Andrew K. Knight ◽  
Nancy L. Scherbarth ◽  
David A. Cremers ◽  
Monty J. Ferris

Early in the next century, several space missions are planned with the goal of landing craft on asteroids, comets, the Moon, and Mars. To increase the scientific return of these missions, new methods are needed to provide (1) significantly more analyses per mission lifetime, and (2) expanded analytical capabilities. One method that has the potential to meet both of these needs for the elemental analysis of geological samples is laser-induced breakdown spectroscopy (LIBS). These capabilities are possible because the laser plasma provides rapid analysis and the laser pulse can be focused on a remotely located sample to perform a stand-off measurement. Stand-off is defined as a distance up to 20 m between the target and laser. Here we present the results of a characterization of LIBS for the stand-off analysis of soils at reduced air pressures and in a simulated Martian atmosphere (5–7 torr pressure of CO2) showing the feasibility of LIBS for space exploration. For example, it is demonstrated that an analytically useful laser plasma can be generated at distances up to 19 m by using only 35 mJ/pulse from a compact laser. Some characteristics of the laser plasma at reduced pressure were also investigated. Temporally and spectrally resolved imaging showed significant changes in the plasma as the pressure was reduced and also showed that the analyte signals and mass ablated from a target were strongly dependent on pressure. As the pressure decreased from 590 torr to the 40–100 torr range, the signals increased by a factor of about 3–4, and as the pressure was further reduced the signals decreased. This behavior can be explained by pressure-dependent changes in the mass of material vaporized and the frequency of collisions between species in the plasma. Changes in the temperature and the electron density of the plasmas with pressure were also examined and detection limits for selected elements were determined.


Sign in / Sign up

Export Citation Format

Share Document