The inner structure and defects of the silicon panel will influence the transfer efficiency and the stability of the polycrystalline solar cells, thus the non-destructive testing of the silicon panel is very important. In this paper, a Scan Acoustic Microscopy is applied to test the inner structure of polycrystalline silicon solar panel. From the grey image of C-Scan by the microscopy, the amplitude distribution of the bottom wave generated by the interaction between the inner grains of the polycrystalline silicon and the acoustic beam can be seen clearly. Furthermore, the defects as well as their size and position can also be tested by A-Scan, B-Scan and C-Scan with high resolution and high accuracy. The experiment results show that it is a good non-destructive method to test and evaluate the quality of the inner structure of polycrystalline silicon solar panel.
