hot wall epitaxy
Recently Published Documents


TOTAL DOCUMENTS

281
(FIVE YEARS 1)

H-INDEX

22
(FIVE YEARS 0)

2021 ◽  
Vol 22 (4) ◽  
pp. 638-643
Author(s):  
M. Vuichyk ◽  
L. Rashkovets’kyi ◽  
S. Lavoryk ◽  
P. Lytvyn ◽  
K. Svezhentsova

In this work morphological, X-ray structural and optical studies of CdZnTe films grown by hot wall epitaxy method at relatively low substrate temperatures were performed. Possible mechanisms and processes of self-organization that occur during the growth of such structures are considered. It is shown that at thickness of film more than 130 nm on the surface, large (lateral size 150 - 200 nm, height - up to 10 nm) and small crystals are observed. The thicknesses and energy of the band gap width of the CdZnTe films grown at different growth times were determined. It is shown that the film absorption edge in the transmission spectra depends on the film thickness and the reasons for the shift of the film absorption edge are discussed.


CrystEngComm ◽  
2018 ◽  
Vol 20 (29) ◽  
pp. 4173-4178 ◽  
Author(s):  
Yukihiko Takagaki ◽  
Jens Herfort ◽  
Manfred Ramsteiner ◽  
Uwe Jahn ◽  
Bernd Jenichen

Bi2Te3 is deposited by hot wall epitaxy in an attempt to form nanosheets on epitaxially-grown ferromagnetic layers of Fe, Fe3Si and Co2FeSi.


2017 ◽  
Vol 475 ◽  
pp. 144-149 ◽  
Author(s):  
P.P. Moskvin ◽  
V.B. Kryzhanivskyy ◽  
L.V. Rashkovetskyi ◽  
V.A. Rudnitskyi ◽  
A.V. Morozov ◽  
...  

2017 ◽  
Vol 17 (4) ◽  
pp. 1977-1981 ◽  
Author(s):  
Yukihiko Takagaki ◽  
Bernd Jenichen ◽  
Manfred Ramsteiner ◽  
Uwe Jahn

CrystEngComm ◽  
2017 ◽  
Vol 19 (21) ◽  
pp. 2936-2945 ◽  
Author(s):  
Christian Röthel ◽  
Michal Radziown ◽  
Roland Resel ◽  
Andreas Grois ◽  
Clemens Simbrunner ◽  
...  

2016 ◽  
Vol 451 ◽  
pp. 120-125 ◽  
Author(s):  
J.W. Jeong ◽  
K.J. Hong ◽  
T.S. Jeong ◽  
C.J. Youn

Sign in / Sign up

Export Citation Format

Share Document