Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

For high-performance Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx). An AlN buffer layer effectively suppresses the interfacial GeOx, and produces a significant enhancement of the electrical characteristics.