Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS = X1−X2) and show D3h symmetric excitons. The lowest FSS obtained is 3.9 μeV with the lowest energy X state (LX) anticlockwise rotate from [1−10] (i.e., zero FSS will be crossed in a proper field). The lateral field projection induces a large eh separation and various FSS, LX, and emission intensity polarization. The lateral field along [1−10] breaks the X1–X2 wavefunction degeneracy for independent HH and VV cascade emissions with robust polarization correlation. With FSS ~4 μeV and T1 ~0.3 ns fastened in a distributed Bragg reflector cavity, polarization-resolved XX–X cross-correlations show fidelity ~0.55 to a maximal entangled state |HH> + |VV>. A higher fidelity and zero FSS will be obtained in the hybrid QD structure with a junction field integrated to tune the FSS and a sub-bandgap excitation to avoid influences from electrons in the barrier.

Dual-Band Plasmonic Perfect Absorber Based on the Hybrid Halide Perovskite in the Communication Regime

Due to the weak absorption of (CH3NH3)PbI3 in the communication regime, which restricts its optoelectronic applications, we design a adjustable dual-band perfect absorber based on the (CH3NH3)PbI3 to significantly enhance its absorption capability. Since the localized plasmon (LP) mode and surface plasmon (SP) mode are excited in the structure, which can both greatly enhance light absorption of the (CH3NH3)PbI3 layer, dual-band perfect absorption peaks are formed in the communication regime, and the absorption of (CH3NH3)PbI3 layer is increased to 43.1% and 64.2% at the dual-band absorption peaks by using finite-difference time-domain (FDTD) methods, respectively. By varying some key structural parameters, the dual-band absorption peaks of (CH3NH3)PbI3 can be separately shifted in a wide wavelength region. Moreover, the designed absorber can keep good performance under wide angles of incidence and manifested polarization correlation. Furthermore, not just for (CH3NH3)PbI3, the physical mechanism in this absorber can also be utilized to strengthen the absorption of other halide perovskites.