2007 IEEE Conference on Electron Devices and Solid-State Circuits
Latest Publications

TOTAL DOCUMENTS

294

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781424406364

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-μm mos transistors

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450071 ◽

2007 ◽

Cited By ~ 2

Author(s):

Peizhen Yang ◽

W.S. Lau ◽

V. Ho ◽

C.H. Loh ◽

S.Y. Siah ◽

...

Keyword(s):

Transport Model ◽

Ballistic Transport ◽

Mos Transistors ◽

Saturation Model ◽

Velocity Saturation

An investigation of luminescent and structure properties of Ca-α-SiAlON doped Eu2+phosphors fabricated by hydrothermal synthesis process

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450217 ◽

2007 ◽

Author(s):

Chun-Han Lin ◽

Ching-Wu Wang ◽

Chin-Wei Lai ◽

Yong-Sheng Ding ◽

Ji-Syuag Huang ◽

...

Keyword(s):

Hydrothermal Synthesis ◽

Synthesis Process ◽

Structure Properties

PDF Not Yet Available In IEEE Xplore

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450211 ◽

2007 ◽

Cited By ~ 1

Design challenges of voltage multiplier in a 0.35-μm 2-poly 4-metal CMOS technology for RFID passive tags

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450155 ◽

2007 ◽

Author(s):

Hiu Yeung Lo ◽

Pui Ying Or ◽

Ka Nang Leung ◽

Lai Kan Leung ◽

Chiu Sing Choy ◽

...

Keyword(s):

Cmos Technology ◽

Voltage Multiplier ◽

Passive Tags ◽

Design Challenges

Investigations of δ-doped InxAl1-xAs/InyGa1-yAs MHEMTs characteristics with different channel compositions

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450233 ◽

2007 ◽

Author(s):

Chia-Jeng Chian ◽

Ciou-Sheng He ◽

Ke-Hua Su ◽

Su-Jen Yu ◽

Bo-I Chou ◽

...

IC2.pdf

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450065 ◽

2007 ◽

PDF Not Yet Available In IEEE Xplore

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450207 ◽

2007 ◽

Cited By ~ 2

A 600 μW readout circuit with potentiostat for amperometric chemical sensors and glucose meter applications

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450317 ◽

2007 ◽

Cited By ~ 4

Author(s):

Wen-Yaw Chung ◽

A.C. Paglinawan ◽

Ying-Hsiang Wang ◽

Tsai-Tseng Kuo

Keyword(s):

Chemical Sensors ◽

Readout Circuit ◽

Glucose Meter

Design of voltage control oscillator for 5.2 GHz in 0.35 μm SiGe BiCMOS technology

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450285 ◽

2007 ◽

Author(s):

Wen-Shan Chen ◽

Hsin-Yen Hsieh ◽

Chi-Huang Lin

Keyword(s):

Voltage Control ◽

Voltage Control Oscillator ◽

Bicmos Technology ◽

Sige Bicmos

A study of luminescent and structure properties of α-SiAlON: Yb2+ phosphors prepared by hydrothermal synthesis process

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450220 ◽

2007 ◽

Author(s):

Ji-Syuag Huang ◽

Ching-Wu Wang ◽

Chun-Han Lin ◽

Chin-Wei Lai ◽

Yong-Sheng Ding ◽

...

Keyword(s):

Hydrothermal Synthesis ◽

Synthesis Process ◽

Structure Properties

2007 IEEE Conference on Electron Devices and Solid-State CircuitsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-μm mos transistors

An investigation of luminescent and structure properties of Ca-α-SiAlON doped Eu2+phosphors fabricated by hydrothermal synthesis process

PDF Not Yet Available In IEEE Xplore

Design challenges of voltage multiplier in a 0.35-μm 2-poly 4-metal CMOS technology for RFID passive tags

Investigations of δ-doped InxAl1-xAs/InyGa1-yAs MHEMTs characteristics with different channel compositions

IC2.pdf

PDF Not Yet Available In IEEE Xplore

A 600 μW readout circuit with potentiostat for amperometric chemical sensors and glucose meter applications

Design of voltage control oscillator for 5.2 GHz in 0.35 μm SiGe BiCMOS technology

A study of luminescent and structure properties of α-SiAlON: Yb2+ phosphors prepared by hydrothermal synthesis process

2007 IEEE Conference on Electron Devices and Solid-State Circuits
Latest Publications