2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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9781728121451

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Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760334 ◽

2019 ◽

Author(s):

En-Chih Chang ◽

Chenxi Meng

Keyword(s):

Robust Control ◽

Power Converters ◽

Wide Bandgap ◽

Power Device ◽

Control Technology

Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760307 ◽

2019 ◽

Author(s):

Yi-nan Zhong ◽

Yue-ming Hsin

Keyword(s):

Gan Hemts

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760322 ◽

2019 ◽

A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760311 ◽

2019 ◽

Cited By ~ 1

Author(s):

Xingran Zhao ◽

Hong Li ◽

Yuting Wang ◽

Zhe Zhou ◽

Kai Sun ◽

...

Keyword(s):

Short Circuit ◽

Circuit Model ◽

Temperature Dependent

Over-current Suppression for Parallel Connected GaN HEMTs

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760315 ◽

2019 ◽

Author(s):

Zu-Bin Wong ◽

Yaow-Ming Chen ◽

Chih-Chao Hsu

Keyword(s):

Gan Hemts

Experimental Verification of DC to Single-phase AC Converter with Power Decoupling Capability using 1.2 kV SiC-MOSFET Module

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760328 ◽

2019 ◽

Author(s):

Hiroki Watanabe ◽

Jun-ichi Itoh ◽

Akio Iwabuchi

Keyword(s):

Experimental Verification ◽

Single Phase ◽

Power Decoupling

WiPDA Asia 2019 Greetings from General Chair

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760320 ◽

2019 ◽

Study on the Imbalanced Voltage of Series-connected Active Power Semiconductor Devices in Power Conversion Systems

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760316 ◽

2019 ◽

Author(s):

Hongjing Zhang ◽

Jun Imaoka ◽

Mostafa Noah ◽

Yuki Ishikura ◽

Masayoshi Yamamoto

Keyword(s):

Semiconductor Devices ◽

Power Conversion ◽

Active Power ◽

Power Semiconductor ◽

Power Semiconductor Devices

GaN Based DC-DC Converter for 48 V Automotive Applications

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760327 ◽

2019 ◽

Cited By ~ 1

Author(s):

Edward A. Jones ◽

Michael de Rooij ◽

Suvankar Biswas

Keyword(s):

Automotive Applications

[Front cover]

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760326 ◽

2019 ◽

Keyword(s):

Front Cover

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters

Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

Table of contents

A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET

Over-current Suppression for Parallel Connected GaN HEMTs

Experimental Verification of DC to Single-phase AC Converter with Power Decoupling Capability using 1.2 kV SiC-MOSFET Module

WiPDA Asia 2019 Greetings from General Chair

Study on the Imbalanced Voltage of Series-connected Active Power Semiconductor Devices in Power Conversion Systems

GaN Based DC-DC Converter for 48 V Automotive Applications

[Front cover]

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2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters

Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

Table of contents

A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET

Over-current Suppression for Parallel Connected GaN HEMTs

Experimental Verification of DC to Single-phase AC Converter with Power Decoupling Capability using 1.2 kV SiC-MOSFET Module

WiPDA Asia 2019 Greetings from General Chair

Study on the Imbalanced Voltage of Series-connected Active Power Semiconductor Devices in Power Conversion Systems

GaN Based DC-DC Converter for 48 V Automotive Applications

[Front cover]

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications