2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 32)

H-INDEX

(FIVE YEARS 2)

Published By IEEE

9781728121451

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760307 ◽

2019 ◽

Author(s):

Yi-nan Zhong ◽

Yue-ming Hsin

Keyword(s):

Gan Hemts

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2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760322 ◽

2019 ◽

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A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760311 ◽

2019 ◽

Cited By ~ 1

Author(s):

Xingran Zhao ◽

Hong Li ◽

Yuting Wang ◽

Zhe Zhou ◽

Kai Sun ◽

...

Keyword(s):

Short Circuit ◽

Circuit Model ◽

Temperature Dependent

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Over-current Suppression for Parallel Connected GaN HEMTs

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760315 ◽

2019 ◽

Author(s):

Zu-Bin Wong ◽

Yaow-Ming Chen ◽

Chih-Chao Hsu

Keyword(s):

Gan Hemts

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Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760334 ◽

2019 ◽

Author(s):

En-Chih Chang ◽

Chenxi Meng

Keyword(s):

Robust Control ◽

Power Converters ◽

Wide Bandgap ◽

Power Device ◽

Control Technology

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Experimental Verification of DC to Single-phase AC Converter with Power Decoupling Capability using 1.2 kV SiC-MOSFET Module

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760328 ◽

2019 ◽

Author(s):

Hiroki Watanabe ◽

Jun-ichi Itoh ◽

Akio Iwabuchi

Keyword(s):

Experimental Verification ◽

Single Phase ◽

Power Decoupling

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WiPDA Asia 2019 Greetings from General Chair

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760320 ◽

2019 ◽

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[Front cover]

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760326 ◽

2019 ◽

Keyword(s):

Front Cover

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Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760332 ◽

2019 ◽

Cited By ~ 1

Author(s):

Dominik Koch ◽

Samuel Araujo ◽

Ingmar Kallfass

Keyword(s):

Wide Bandgap ◽

Soft Switching ◽

Accuracy Analysis ◽

Switching Operation ◽

Loss Measurement ◽

Power Transistors

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Study of Passivation Layer on Bevel Edge Termination for SiC RSD

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2019.8760331 ◽

2019 ◽

Author(s):

Ziyue Wang ◽

Lin Liang ◽

Ludan Zhang

Keyword(s):

Passivation Layer ◽

Edge Termination ◽

Bevel Edge

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2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

Table of contents

A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET

Over-current Suppression for Parallel Connected GaN HEMTs

Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters

Experimental Verification of DC to Single-phase AC Converter with Power Decoupling Capability using 1.2 kV SiC-MOSFET Module

WiPDA Asia 2019 Greetings from General Chair

[Front cover]

Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation

Study of Passivation Layer on Bevel Edge Termination for SiC RSD

Export Citation Format

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

Table of contents

A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET

Over-current Suppression for Parallel Connected GaN HEMTs

Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters

Experimental Verification of DC to Single-phase AC Converter with Power Decoupling Capability using 1.2 kV SiC-MOSFET Module

WiPDA Asia 2019 Greetings from General Chair

[Front cover]

Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation

Study of Passivation Layer on Bevel Edge Termination for SiC RSD

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications