Optimization techniques for p-GTO thyristor design

A new type of semiconductor power device was devised in the early ’90s as an alternative to the classic Gate Turn-Off (GTO) thyristor. Because the low-doped n-base was replaced by a low-doped p-base, it was called the p-GTO. Its main advantage is a higher possible control voltage when the device is switched off, leading to the possibility of a higher blocking anode current (IATO) and a lower turn-off time. The studies and techniques employed with the help of SILVACO-TCAD simulation software Athena and Atlas show that the p-GTO has higher breakdown voltages compared with its classic counterpart and similar on-state voltage (VT) and switching characteristics when replacing the GTO in the same circuit. Specific circuit improvements, like an affordable higher turn-off gate voltage, will drive the p-GTO into even faster switching operation.

Power quality improvement using model predictive control based shunt connected custom power device in a single phase system

The performance evaluation of a single-phase shunt-connected custom power device (SC-CPD) for current quality improvement is discussed in this paper. The SC-CPD performance is compared based on the linear triangle-comparison pulse width modulation (TC-PWM) control, hysteresis current control (HCC), and the predictive non-linear switching control strategies. The predictive switching control is implemented using the finite control set-model predictive control (FCS-MPC). The switching control techniques’ operational and implementation features are discussed for the given control objectives of the SC-CPD for a particular nonlinear load. Basic functional case studies with sinusoidal and non-sinusoidal supply mains in the presence of non-linear loads are presented to illustrate the appropriateness of the switching techniques. The SC-CPD model and control methodologies are developed in the MATLAB/Simulink environment, including designing of various circuit components. Finally, performance simulation results using the switching techniques have been compared and validated using OPAL-RT 4510-based real-time simulations.

Influence of limiting the duration of the armature winding current on the operating indicators of a linear pulse electromechanical induction type converter

Introduction. Linear pulse electromechanical converters of induction type (LPECIT) are used in many branches of science and technology as shock-power devices and electromechanical accelerators. In them, due to the phase shift between the excitation current in the inductor winding and the induced current in the armature winding, in addition to the initial electrodynamic forces (EDF) of repulsion, subsequent EDF of attraction also arise. As a result, the operating indicators of LPECIT are reduced. The purpose of the article is to increase the performance of linear pulse electromechanical induction-type converters when operating as a shock-power device and an electromechanical accelerator by limiting the duration of the induced current in the armature winding until its polarity changes. Methodology. To analyze the electromechanical characteristics and indicators of LPECIT, a mathematical model was used, in which the solutions of equations describing interrelated electrical, magnetic, mechanical and thermal processes are presented in a recurrent form. Results. To eliminate the EDF of attraction between the LPIECIT windings, it is proposed to limit the duration of the induced current in the armature winding before changing its polarity by connecting a rectifier diode to it. It was found that when the converter operates as a shock-power device without limiting the armature winding current, the value of the EDF pulse after reaching the maximum value decreases by the end of the operating cycle. In the presence of a diode in the armature winding, the efficiency criterion, taking into account the EDF pulse, recoil force, current and heating temperature of the inductor winding, increases. When the converter operates as an electromechanical accelerator without limiting the armature winding current, the speed and efficiency decrease, taking into account the kinetic energy and voltage of the capacitive energy storage at the end of the operating cycle. In the presence of a diode in the armature winding, the efficiency criterion increases, the temperature rise of the armature winding decreases, the value of the maximum efficiency increases, reaching 16.16 %. Originality. It has been established that due to the limitation of the duration of the armature winding current, the power indicators of the LPECIT increase when operating as a shock-power device and the speed indicators when the LPECIT operates as an electromechanical accelerator. Practical value. It was found that with the help of a rectifier diode connected to the multi-turn winding of the armature, unipolarity of the current is ensured, which leads to the elimination of the EDF of attraction and an increase in the performance of the LPECIT.

High gain multiphase boost converter based-on capacitor clamping structure

<p>In the last few years, the non-isolated dc converters involving high voltage gain with adequate performance are becoming quite popular in industrial applications. This is resulting in high voltage and current stress on the power device (switches and diodes), as well as a limited output voltage with a high duty cycle. This paper proposes a multi-phase non-isolated boost converter that uses capacitor clamping to increase output voltage while reducing stress across the power device. There are two stages in the proposed converter (first stage is three inductors and three switches and the second stage is clamper circuit of three capacitors and three diodes). The proposed converter is high voltage gain, with low voltage stress through switches transistors. To justify the theoretical analysis, the concept was validated through mathematical analysis and by simulation using MATLAB/SIMULINK. The results carried out the results permit the converter behavior and performance to be accurately.</p>

Electromigration Analysis of Solder Joints for Power Modules Using an Electrical-Thermal-Stress-Atomic Coupled Model

Numerical analysis of electromigration in solder joints has mainly examined ball grid arrays (BGAs) in flip-chip packages, and few numerical study has been reported on solder joints in power modules. This report describes an electromigration analysis of solder joints for power modules with a Si-based power device, which are still widely used today, using an electrical-thermal-stress-atomic coupled analysis. To evaluate electromigration, a solder joint with a power device and a substrate as used in power modules was simulated. Due to current crowding, the current density at the edge of the solder joint exceeded the electromigration threshold even in Si-based power modules. Unlike general electromigration phenomena, the vacancy concentration increased at the center and decreased at the edges of the solder joint, regardless of whether it was on the cathode side or anode side. The vacancy concentration clearly increased with increasing current density and size ratio. Creep strain increased significantly with increasing current density, temperature, and size ratio. The largest change in vacancy concentration and creep strain was at the anode edge where current crowding occurred. In addition, we modeled the two-dimensional behavior of metal atoms passing through the interface of the solder joint. The expansion of intermetallic compound was accelerated by increasing the temperature and current density.