Defect Control in Semiconductors
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LATTICE DEFECTS IN DIACETYLENE SINGLE CRYSTALS

1990 ◽  
pp. 1653-1658 ◽  
Author(s):  
Kunihide IZUMI ◽  
Minoru KONDO ◽  
Mitsuyoshi MATSUSHITA ◽  
Akio ISHIZAWA
Keyword(s):  
Single Crystals ◽  
Lattice Defects

STRUCTURE AND PROPERTIES OF ULTRA-THIN ORGANIC FILMS PREPARED BY MBE METHOD

1990 ◽  
pp. 1629-1634
Author(s):  
Y. Maruyama ◽  
H. Hoshi ◽  
A.J. Dann ◽  
T. Inabe ◽  
M.R. Willis
Keyword(s):  
Organic Films ◽  
Structure And Properties ◽  
Thin Organic Films

Determination of Concentration Profile and Field Enhanced Emission Rate of Midgap Level in GaAs by Constant Capacitance Technique

1990 ◽  
pp. 1593-1598
Author(s):  
Hajime Tomokage ◽  
Ming-Bing Chang ◽  
Jeng-Jye Shiau ◽  
Richard H. Bube ◽  
John C. Bravman
Keyword(s):  
Concentration Profile ◽  
Emission Rate

CHARACTERIZATION OF MICRO-DEFECTS IN NEARLY PERFECT CRYSTALS BY ANALYZING THE PENDELLÖSUNG FRINGES IN THE SECTION TOPOGRAPHS OF HIGH-ORDER REFLECTIONS

1990 ◽  
pp. 1529-1534 ◽  
Author(s):  
Satoshi IIDA ◽  
Hiroshi TAKENO ◽  
Yasuyoshi YAGOU ◽  
Nobuo KASAGI ◽  
Yoshimitsu SUGITA ◽  
...  
Keyword(s):  
High Order ◽  
Section Topographs

PROCESS-INDUCED DEFECT CHARACTERIZATION IN III-V COMPOUNDS

1990 ◽  
pp. 1523-1528 ◽  
Author(s):  
Aranka HUBER ◽  
Claude GRATTEPAIN ◽  
Philippe COLLOT
Keyword(s):  
Defect Characterization

CATHODOLUMINESCENCE RELATED TO DISLOCATIONS IN GaAs

1990 ◽  
pp. 1477-1481 ◽  
Author(s):  
Takashi SEKIGUCHI ◽  
Ichiro YONENAGA ◽  
Koji SUMINO
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