Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)
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Study of 1/f noise in III-V nitride based MODFETs at low drain bias

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836424 ◽

2003 ◽

Author(s):

W. Ho ◽

C. Suryaa ◽

K.Y. Tong

Keyword(s):

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Smart ferroelectric materials for sensors and mechatronic device applications

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836410 ◽

2003 ◽

Author(s):

H.L.W. Chan

Keyword(s):

Ferroelectric Materials ◽

Device Applications

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A testing instrument for dynamic contact resistance

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836423 ◽

2003 ◽

Author(s):

Li Wenhua ◽

Li Zhigang

Keyword(s):

Contact Resistance ◽

Dynamic Contact ◽

Testing Instrument

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Photoluminescence of rapid-thermal annealed Mg-doped GaN films

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836429 ◽

2003 ◽

Author(s):

L.S. Wang ◽

W.K. Fong ◽

C. Surya ◽

K.W. Cheah ◽

W.H. Zheng ◽

...

Keyword(s):

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A physical approach to enhance BSIM3 NQS model for fast transient simulation

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836421 ◽

2003 ◽

Author(s):

Wai-Kit Lee ◽

Mansun Chan ◽

P.K. Ko

Keyword(s):

Transient Simulation ◽

Physical Approach ◽

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Photoconductive detection of millimetre waves using proton bombarded GaAs

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836397 ◽

2003 ◽

Author(s):

C.S. Wong ◽

G.M. Dai ◽

H.K. Tsang

Keyword(s):

Millimetre Waves

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900 MHz 7.4 W SiGe heterojunction bipolar transistor

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836426 ◽

2003 ◽

Author(s):

Jinshu Zhang ◽

Hongyong Jia ◽

Pei-Hsin Tsien ◽

Tai-Chin Lo ◽

Zengmin Yang ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Thin-film NTC resistor based on SrNb/sub x/Ti/sub 1-x/O/sub 3/

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836412 ◽

2003 ◽

Author(s):

P.T. Lai ◽

Bin Li ◽

G.Q. Li

Keyword(s):

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The influence of deposition substrate temperature on the performance of organic electroluminescent devices

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836399 ◽

2003 ◽

Author(s):

Z.Q. Gao ◽

C.S. Lee ◽

S.T. Lee

Keyword(s):

Substrate Temperature ◽

Electroluminescent Devices ◽

Organic Electroluminescent ◽

Deposition Substrate

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Nature of traps in gate silicon oxynitride of MOS devices

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836408 ◽

2003 ◽

Author(s):

Yu.N. Morokov ◽

V.A. Gritsenko ◽

Yu.N. Novikov ◽

J.B. Xu ◽

L.W.M. Lau ◽

...

Keyword(s):

Silicon Oxynitride ◽

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