Selected Topics in Group IV and II–VI Semiconductors
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scholarly journals Ge+ ion implantation – a competing technology?

1996 ◽  
pp. 147-160
Author(s):  
P.L.F. Hemment ◽  
F. Cristiano ◽  
A. Nejim ◽  
S. Lombardo ◽  
K.K. Larssen ◽  
...  
Keyword(s):  
Ion Implantation

Relationship between deep levels in vanadium-doped CdTe and photorefractive effect

1996 ◽  
pp. 264-270
Author(s):  
A. Zerrai ◽  
G. Marrakchi ◽  
G. Bremond ◽  
J.Y. Moisan ◽  
G. Martel ◽  
...  
Keyword(s):  
Photorefractive Effect ◽  
Deep Levels

Influence of zinc on the photorefractive behaviour of Cd1−xZnxTe:V

1996 ◽  
pp. 250-258
Author(s):  
G. Martel ◽  
J.Y. Moisan ◽  
B. Lambert ◽  
M. Gauneau ◽  
S. Stephan ◽  
...  

Self-compensation studies in Cd-saturated In-doped CdTe

1996 ◽  
pp. 219-222
Author(s):  
L. Shcherbak ◽  
P. Feichouk ◽  
P. Fochouk ◽  
O. Panchouk

Point defects in Te-rich CdTe

1996 ◽  
pp. 144-147
Author(s):  
O. Panchouk ◽  
P. Fochouk ◽  
P. Feichouk
Keyword(s):  
Point Defects

Defect recovery of ion-implanted CdTe

1996 ◽  
pp. 128-133
Author(s):  
A. Burchard ◽  
R. Magerle ◽  
J. Freidinger ◽  
S.G. Jahn ◽  
M. Deicher
Keyword(s):  
Defect Recovery ◽  
Ion Implanted

Realization of Si1−x − yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

1996 ◽  
pp. 436-441
Author(s):  
J. Boulmer ◽  
P. Boucaud ◽  
C. Guedj ◽  
D. Débarre ◽  
D. Bouchier ◽  
...  
Keyword(s):  
Pulsed Laser
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