2012 IEEE International Reliability Physics Symposium (IRPS)
Latest Publications

TOTAL DOCUMENTS

190

(FIVE YEARS 0)

H-INDEX

17

(FIVE YEARS 0)

Published By IEEE

9781457716805, 9781457716782, 9781457716799

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

SET pulse-width measurement eliminating pulse-width modulation and within-die process variation effects

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241926 ◽

2012 ◽

Author(s):

Ryo Harada ◽

Yukio Mitsuyama ◽

Masanori Hashimoto ◽

Takao Onoye

Keyword(s):

Pulse Width ◽

Pulse Width Modulation ◽

Process Variation ◽

Width Measurement

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Improving defect localization techniques with laser beam with specific analysis and set-up modules

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241903 ◽

2012 ◽

Author(s):

R. Llido ◽

J. Gomez ◽

V. Goubier ◽

G. Haller ◽

V. Pouget ◽

...

Keyword(s):

Specific Analysis ◽

Defect Localization ◽

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Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241842 ◽

2012 ◽

Author(s):

Y. Gao ◽

D. S. Ang ◽

C. D. Young ◽

G. Bersuker

Keyword(s):

Negative Bias ◽

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Product reliability at low failure rates: Wrong expectations and real limitations

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241851 ◽

2012 ◽

Author(s):

Werner Kanert

Keyword(s):

Failure Rates ◽

Product Reliability

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Clarification of the degradation modes of an InP-based semiconductor MZ modulator

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241884 ◽

2012 ◽

Author(s):

Hiroyasu Mawatari ◽

Takako Yasui ◽

Kei Watanabe ◽

Mitsuteru Ishikawa ◽

Eiichi Yamada ◽

...

Keyword(s):

Degradation Modes

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New insights into SILC-based life time extraction

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241854 ◽

2012 ◽

Author(s):

C.D. Young ◽

G. Bersuker ◽

M. Jo ◽

K. Matthews ◽

J. Huang ◽

...

Keyword(s):

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Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241816 ◽

2012 ◽

Author(s):

Michael D. Hodge ◽

Ramakrishna Vetury ◽

Jeffrey B. Shealy

Keyword(s):

Failure Mechanisms ◽

Gan Hemts ◽

Maximum Voltage

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Generalized successive failure methodology for non-weibull distributions and its applications to SiO2 or high-k/SiO2 bilayer dielectrics and extrinsic failure mode

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241863 ◽

2012 ◽

Author(s):

Ernest Wu ◽

Jordi Sune ◽

Charles LaRow

Keyword(s):

Failure Mode ◽

Weibull Distributions ◽

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Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241945 ◽

2012 ◽

Author(s):

Y. Mamy Randriamihaja ◽

A. Zaka ◽

V. Huard ◽

M. Rafik ◽

D. Rideau ◽

...

Keyword(s):

Hot Carrier ◽

Defect Creation ◽

Hot Carrier Degradation

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Impact of program/erase stress induced hole current on data retention degradation for MONOS memories

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241772 ◽

2012 ◽

Author(s):

Shosuke Fujii ◽

Ryota Fujitsuka ◽

Katsuyuki Sekine ◽

Haruka Kusai ◽

Kiwamu Sakuma ◽

...

Keyword(s):

Data Retention ◽

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