1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings
Latest Publications

TOTAL DOCUMENTS

131

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780338049

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Limiting roughness in anisotropic etching

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651316 ◽

2002 ◽

Cited By ~ 4

Author(s):

R. Divan ◽

H. Camon ◽

N. Moldovan ◽

M. Dilhan

Keyword(s):

Anisotropic Etching

Fractal study for describing surface morphology from atomic forge microscopy images

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651318 ◽

2002 ◽

Cited By ~ 1

Author(s):

C. Flueraru ◽

S. Nastase ◽

S. Iovan

Keyword(s):

Surface Morphology ◽

Microscopy Images

Spin-on dopants as lifetime modifier sources in fast recovery epitaxial diodes processing

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651585 ◽

2002 ◽

Cited By ~ 2

Author(s):

A. Veron ◽

M. Ohanisian ◽

D. Ciocea ◽

C. Mitroi

Keyword(s):

Fast Recovery

Phase diagram for pseudomorphic Si/sub x/Ge/sub 1-x/ crystals

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651245 ◽

2002 ◽

Author(s):

I.S. Chikichev ◽

A.V. Vasev ◽

S.I. Chikichev

Keyword(s):

Phase Diagram

Dependence of the noise resistance of microwave FET's from the device characteristics

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651199 ◽

2002 ◽

Author(s):

A. Caddemi ◽

F. Di Prima ◽

M. Sannino

Keyword(s):

Noise Resistance

Status and trends of microprocessor design

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651339 ◽

2002 ◽

Cited By ~ 1

Author(s):

T.I. Bajenescu

Keyword(s):

Microprocessor Design ◽

Status And Trends

Proton irradiation induced defects in oxygenated Si p-n junctions

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651027 ◽

2002 ◽

Author(s):

T. Botila ◽

I. Pintilie ◽

D. Petre ◽

L. Pintilie

Keyword(s):

Proton Irradiation ◽

Induced Defects ◽

Irradiation Induced Defects

3-D modelling for waveguide to opto-FET leaky-wave coupling in silicon microsystems

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651310 ◽

2002 ◽

Author(s):

D. Cristea

Keyword(s):

Leaky Wave ◽

Wave Coupling

Vowel recognition in Romanian language

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651330 ◽

2002 ◽

Author(s):

O. Grigore ◽

I. Gavat ◽

M. Zirra

Keyword(s):

Vowel Recognition

Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651566 ◽

2002 ◽

Cited By ~ 2

Author(s):

M.I. Lepsa ◽

Th.G. van de Roer ◽

J.J.M. Kwaspen ◽

E. Smalbrugge ◽

W. van der Vleuten ◽

...

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Double Barrier ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling ◽

Base Contact

1997 International Semiconductor Conference 20th Edition. CAS '97 ProceedingsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Limiting roughness in anisotropic etching

Fractal study for describing surface morphology from atomic forge microscopy images

Spin-on dopants as lifetime modifier sources in fast recovery epitaxial diodes processing

Phase diagram for pseudomorphic Si/sub x/Ge/sub 1-x/ crystals

Dependence of the noise resistance of microwave FET's from the device characteristics

Status and trends of microprocessor design

Proton irradiation induced defects in oxygenated Si p-n junctions

3-D modelling for waveguide to opto-FET leaky-wave coupling in silicon microsystems

Vowel recognition in Romanian language

Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings
Latest Publications