2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781467309837, 9781467309806, 9781467309820

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Space Domain Reflectometry for open failure localization

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306311 ◽

2012 ◽

Cited By ~ 5

Author(s):

Jan Gaudestad ◽

Vladimir Talanov ◽

Nicolas Gagliolo ◽

Antonio Orozco

Keyword(s):

Space Domain ◽

Failure Localization

EELS chemical bond characterization of process induced damages in low-k dielectric films

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306296 ◽

2012 ◽

Cited By ~ 1

Author(s):

YongKai Zhou ◽

Jie Zhu ◽

AnYan Du ◽

YouNan Hua ◽

SiPing Zhao ◽

...

Keyword(s):

Chemical Bond ◽

Dielectric Films ◽

Low K

Fault isolation challenges and opportunities for proximal-probe imaging

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306328 ◽

2012 ◽

Author(s):

D. P. Vallett

Keyword(s):

Fault Isolation ◽

Challenges And Opportunities

Electrical and charge trapping properties of HfO2/Al2O3 bilayer gate dielectrics on In0.53Ga0.47As substrates

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306299 ◽

2012 ◽

Author(s):

A. K. Ghosh ◽

T. Das ◽

C. Mukherjee ◽

A. S. Bandyopadhyay ◽

G. K. Dalapati ◽

...

Keyword(s):

Gate Dielectrics ◽

Charge Trapping

Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306264 ◽

2012 ◽

Cited By ~ 1

Author(s):

K. Shubhakar ◽

K. L. Pey ◽

M. Bosman ◽

R. Thamankar ◽

S. S. Kushvaha ◽

...

Keyword(s):

Correlation Study ◽

Physical Analysis

A novel internal field enhanced retention degradation model for localized charge trapping memory device

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306295 ◽

2012 ◽

Author(s):

Xiao Yu ◽

Liyang Pan ◽

Fengying Qiao ◽

Guangjian Shi ◽

Jun Xu

Keyword(s):

Charge Trapping ◽

Internal Field ◽

Memory Device ◽

Degradation Model ◽

Charge Trapping Memory

Color guided top down analysis on memory device

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306310 ◽

2012 ◽

Author(s):

F. K. Yong

Keyword(s):

Memory Device ◽

Top Down

Application of Seebeck Effect Imaging on failure analysis of via defect

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306316 ◽

2012 ◽

Cited By ~ 2

Author(s):

Noor Faizah Nordin

Keyword(s):

Failure Analysis ◽

Seebeck Effect

Die-level leakage current path analysis based on IR-OBIRCH technology

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306246 ◽

2012 ◽

Cited By ~ 4

Author(s):

Jinglong Li ◽

Gaojie Wen ◽

Joe Yu ◽

Grace Song

Keyword(s):

Path Analysis ◽

Leakage Current ◽

Current Path

Shifting time waveform induced CMOS latch up in bootstrapping technique applications

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306305 ◽

2012 ◽

Author(s):

Purwadi ◽

Shu-Ming Bai ◽

Briliant Adhi Prabowo ◽

Jung-Ruey Tsai ◽

Gene Sheu

Keyword(s):

Time Waveform ◽

Latch Up

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated CircuitsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Space Domain Reflectometry for open failure localization

EELS chemical bond characterization of process induced damages in low-k dielectric films

Fault isolation challenges and opportunities for proximal-probe imaging

Electrical and charge trapping properties of HfO2/Al2O3 bilayer gate dielectrics on In0.53Ga0.47As substrates

Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM

A novel internal field enhanced retention degradation model for localized charge trapping memory device

Color guided top down analysis on memory device

Application of Seebeck Effect Imaging on failure analysis of via defect

Die-level leakage current path analysis based on IR-OBIRCH technology

Shifting time waveform induced CMOS latch up in bootstrapping technique applications

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Latest Publications