2017 IEEE International Electron Devices Meeting (IEDM)

Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268433 ◽

2017 ◽

Cited By ~ 7

Author(s):

A. Subirats ◽

A. Arreghini ◽

E. Capogreco ◽

R. Delhougne ◽

C.-L. Tan ◽

...

Keyword(s):

Grain Boundaries ◽

Channel Conductivity

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Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268355 ◽

2017 ◽

Cited By ~ 2

Author(s):

Sichao Du ◽

Zhenyi Ni ◽

Xuemei Liu ◽

Hongwei Guo ◽

Ayaz Ali ◽

...

Keyword(s):

Quantum Dots ◽

Short Wavelength ◽

Silicon Quantum Dots ◽

Infrared Photodetection

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Manufactured-on-demand steep subthreshold organic field effect transistor for low power and high sensitivity ion and fluorescence sensing

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268351 ◽

2017 ◽

Cited By ~ 4

Author(s):

J. Zhao ◽

Q. Li ◽

Y. Huang ◽

S. Li ◽

W. Tang ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistor ◽

High Sensitivity ◽

Fluorescence Sensing ◽

Organic Field Effect Transistor ◽

On Demand ◽

Effect Transistor

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Development of high-frequency bulk acoustic wave (BAW) resonators as biosensors and bioactuators

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268362 ◽

2017 ◽

Author(s):

X. Duan ◽

S. Pan ◽

W. Pang

Keyword(s):

Acoustic Wave ◽

High Frequency ◽

Bulk Acoustic Wave

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Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268517 ◽

2017 ◽

Cited By ~ 4

Author(s):

V. D. Nguyen ◽

P. Sabon ◽

J. Chatterjee ◽

L. Tille ◽

P. Veloso Coelho ◽

...

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

High Density ◽

Novel Approach ◽

Nano Patterning

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Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268455 ◽

2017 ◽

Cited By ~ 3

Author(s):

S. Nakazawa ◽

H.-A. Shih ◽

N. Tsurumi ◽

Y. Anda ◽

T. Hatsuda ◽

...

Keyword(s):

Gate Insulator ◽

Switching Performance ◽

Fast Switching

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Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268343 ◽

2017 ◽

Cited By ~ 8

Author(s):

Adrian Chasin ◽

Erik Bury ◽

Ben Kaczer ◽

Jacopo Franco ◽

Philippe Roussel ◽

...

Keyword(s):

Si Nanowire ◽

Nanowire Transistors ◽

Complete Degradation ◽

Extrinsic Effects

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Electron beam detection of cobalt trench embedded voids enabling improved process control for Middle-Of-Line at the 7nm node and beyond

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268391 ◽

2017 ◽

Cited By ~ 1

Author(s):

N. Breil ◽

D. Shemesh ◽

J. Fernandez ◽

R. Hung ◽

N. Bekiaris ◽

...

Keyword(s):

Electron Beam ◽

Process Control

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Thermally stable and flexible paper photosensors based on 2D BN nanosheets

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268353 ◽

2017 ◽

Author(s):

C. H. Lin ◽

B. Cheng ◽

M. L. Tsai ◽

H. C. Fu ◽

W. Luo ◽

...

Keyword(s):

Thermally Stable

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Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268349 ◽

2017 ◽

Cited By ~ 1

Author(s):

A. Daus ◽

S. Han ◽

S. Knobelspies ◽

G. Cantarella ◽

C. Vogt ◽

...

Keyword(s):

P Type

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2017 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND

Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

Manufactured-on-demand steep subthreshold organic field effect transistor for low power and high sensitivity ion and fluorescence sensing

Development of high-frequency bulk acoustic wave (BAW) resonators as biosensors and bioactuators

Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications

Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator

Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects

Electron beam detection of cobalt trench embedded voids enabling improved process control for Middle-Of-Line at the 7nm node and beyond

Thermally stable and flexible paper photosensors based on 2D BN nanosheets

Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors

Export Citation Format

2017 IEEE International Electron Devices Meeting (IEDM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND

Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

Manufactured-on-demand steep subthreshold organic field effect transistor for low power and high sensitivity ion and fluorescence sensing

Development of high-frequency bulk acoustic wave (BAW) resonators as biosensors and bioactuators

Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications

Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator

Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects

Electron beam detection of cobalt trench embedded voids enabling improved process control for Middle-Of-Line at the 7nm node and beyond

Thermally stable and flexible paper photosensors based on 2D BN nanosheets

Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors

2017 IEEE International Electron Devices Meeting (IEDM)
Latest Publications