Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting
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A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587900 ◽

2002 ◽

Cited By ~ 7

Author(s):

R. Bashir ◽

J. De Santis ◽

D. Chen ◽

F. Hebert ◽

A. Ramde ◽

...

Keyword(s):

High Precision ◽

Analog Circuits ◽

High Frequency ◽

Bipolar Technology

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A 4ns 0.5u BiCMOS TTL 22V10-PAL

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587851 ◽

2002 ◽

Author(s):

S. Wong ◽

D. Yu ◽

R. Bettman ◽

S. Pai ◽

Y. Koh ◽

...

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Accuracy of series resistances extraction schemes for polysilicon bipolar transistors

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587883 ◽

2002 ◽

Cited By ~ 2

Author(s):

E. Dubois ◽

P.-H. Bricout ◽

E. Robilliart

Keyword(s):

Bipolar Transistors

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A new approach for extracting base width modulation parameters in bipolar transistors

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587881 ◽

2002 ◽

Author(s):

K. Joardar

Keyword(s):

Bipolar Transistors ◽

New Approach ◽

Base Width

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A double-polysilicon self-aligned npn bipolar process (ADRF) with optional NMOS transistors for RF and microwave applications

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587899 ◽

2002 ◽

Cited By ~ 7

Author(s):

K. O ◽

P. Garone ◽

C. Tsai ◽

B. Scharf ◽

M. Higgins ◽

...

Keyword(s):

Microwave Applications ◽

Nmos Transistors

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SPICE Early modeling [bipolar transistors]

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587882 ◽

2002 ◽

Cited By ~ 2

Author(s):

C.C. McAndrew ◽

L.W. Nagel

Keyword(s):

Bipolar Transistors

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A single-poly BiCMOS technology with 30 GHz bipolar f/sub T/

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587902 ◽

2002 ◽

Author(s):

Chih Hsin Wang ◽

J. van der Velden

Keyword(s):

Bicmos Technology

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A novel sub-2.0 V BiCMOS logic circuit with a BiCMOS charge pump

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587849 ◽

2002 ◽

Cited By ~ 1

Author(s):

H. Okamura ◽

T. Atsumo ◽

K. Takeda ◽

M. Takada ◽

K. Imai ◽

...

Keyword(s):

Charge Pump ◽

Logic Circuit

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Modeling and simulation of package and interconnects

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587855 ◽

2002 ◽

Author(s):

J.L. Prince

Keyword(s):

Modeling And Simulation

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A physically based model for carrier freeze-out in Si- and SiGe-base bipolar transistors suitable for implementation in device simulators

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587892 ◽

2002 ◽

Cited By ~ 7

Author(s):

M.R. Shaheed ◽

C.M. Maziar

Keyword(s):

Bipolar Transistors ◽

Physically Based Model ◽

Physically Based ◽

Freeze Out

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Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits

A 4ns 0.5u BiCMOS TTL 22V10-PAL

Accuracy of series resistances extraction schemes for polysilicon bipolar transistors

A new approach for extracting base width modulation parameters in bipolar transistors

A double-polysilicon self-aligned npn bipolar process (ADRF) with optional NMOS transistors for RF and microwave applications

SPICE Early modeling [bipolar transistors]

A single-poly BiCMOS technology with 30 GHz bipolar f/sub T/

A novel sub-2.0 V BiCMOS logic circuit with a BiCMOS charge pump

Modeling and simulation of package and interconnects

A physically based model for carrier freeze-out in Si- and SiGe-base bipolar transistors suitable for implementation in device simulators

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Latest Publications