Outstanding physical and electrical properties such as quantum transport, high carrier mobility, excellent electrical and thermal conductivity, high surface area, good optical transparency, strong mechanical strength and easy fabrication make carbon nanoparticles appropriate on nanoelectronic
applications. Carbon nanoparticle based p–n junction, as a fundamental structure of nanoscale devices, is analytically presented in this study. The carbon nanoparticle p–n interface reveals an improved transport along the junction in comparison with
the conventional p–n junction. Controlling the doping of p–n junction based device partially permit the foundation of carbon nanoparticle based bipolar technology and can overcome application of current in silicon based technology. This paper analytically
demonstrates findings on electric field, space charge region width, scalar potential, built-in potential and transport along carbon nanoparticle based p–n junction. The uniqueness of this method is to create a well identified carbon nanoparticle based p–n
junction which opens new opportunities for researching high field transport limit in nanoscale devices.