Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

A novel bitmap analysis technique - test sensitivity intensity bitmap

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025626 ◽

2003 ◽

Author(s):

Chan Huan Gim

Keyword(s):

Test Sensitivity ◽

Analysis Technique

Characterization of ultrathin plasma nitrided gate dielectrics in pMOSFET for 0.18 μm technology and beyond

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025674 ◽

2003 ◽

Cited By ~ 1

Author(s):

S.S. Tan ◽

C.H. Ang ◽

C.M. Lek ◽

T.P. Chen ◽

B.J. Cho ◽

...

Keyword(s):

Gate Dielectrics

Dopant delineation: novel technique for silicon dopant implantation defects identification

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025640 ◽

2003 ◽

Cited By ~ 1

Author(s):

Ng Sea Chooi ◽

Ng Jou Ching

Keyword(s):

Novel Technique ◽

Defects Identification

A process technique to engineer the stress of thick doped polysilicon films for MEMS applications

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025663 ◽

2003 ◽

Cited By ~ 2

Author(s):

A. Agarwal ◽

R. Nagarajan ◽

J. Singh

Keyword(s):

Process Technique ◽

Polysilicon Films

Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025619 ◽

2003 ◽

Cited By ~ 7

Author(s):

Z.G. Song ◽

J.Y. Dai ◽

S. Ansari ◽

C.K. Oh ◽

S. Redkar

Keyword(s):

Root Cause Analysis ◽

Cause Analysis ◽

Root Cause ◽

Front End ◽

Processing Defect ◽

Defect Localization ◽

Contrast Technique ◽

Voltage Contrast

Degradation behaviour of polysilicon high voltage thin film transistors

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025666 ◽

2003 ◽

Author(s):

M. Mugnier ◽

S.K. Manhas ◽

D. Chandra Sekhar ◽

S. Krishnan ◽

R. Cross ◽

...

Keyword(s):

Thin Film ◽

High Voltage ◽

Thin Film Transistors ◽

Degradation Behaviour

Novel application of FIB lift-out and ultramicrotomy for advanced package failure analysis

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025638 ◽

2003 ◽

Cited By ~ 1

Author(s):

K.N. Mohammad ◽

K.S. Sim

Keyword(s):

Failure Analysis

Plasma charging damage to gate dielectric-past, present and future

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025670 ◽

2003 ◽

Cited By ~ 1

Author(s):

K.P. Cheung

Keyword(s):

Gate Dielectric

Backside SC-OBIC using a pulsed NIR-laser and its application to fault location

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025654 ◽

2003 ◽

Cited By ~ 1

Author(s):

T. Beauchene ◽

D. Lewis ◽

F. Beaudoin ◽

P. Perdu ◽

P. Fouillat

Keyword(s):

Fault Location ◽

Nir Laser

Electrostatic discharge (ESD) and failure analysis: models, methodologies and mechanisms

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025612 ◽

2003 ◽

Cited By ~ 3

Author(s):

S.H. Voldman

Keyword(s):

Failure Analysis ◽

Electrostatic Discharge ◽

Analysis Models

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A novel bitmap analysis technique - test sensitivity intensity bitmap

Characterization of ultrathin plasma nitrided gate dielectrics in pMOSFET for 0.18 μm technology and beyond

Dopant delineation: novel technique for silicon dopant implantation defects identification

A process technique to engineer the stress of thick doped polysilicon films for MEMS applications

Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis

Degradation behaviour of polysilicon high voltage thin film transistors

Novel application of FIB lift-out and ultramicrotomy for advanced package failure analysis

Plasma charging damage to gate dielectric-past, present and future

Backside SC-OBIC using a pulsed NIR-laser and its application to fault location

Electrostatic discharge (ESD) and failure analysis: models, methodologies and mechanisms

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Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A novel bitmap analysis technique - test sensitivity intensity bitmap

Characterization of ultrathin plasma nitrided gate dielectrics in pMOSFET for 0.18 μm technology and beyond

Dopant delineation: novel technique for silicon dopant implantation defects identification

A process technique to engineer the stress of thick doped polysilicon films for MEMS applications

Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis

Degradation behaviour of polysilicon high voltage thin film transistors

Novel application of FIB lift-out and ultramicrotomy for advanced package failure analysis

Plasma charging damage to gate dielectric-past, present and future

Backside SC-OBIC using a pulsed NIR-laser and its application to fault location

Electrostatic discharge (ESD) and failure analysis: models, methodologies and mechanisms

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)
Latest Publications