Electrostatic discharge (ESD) and failure analysis: models, methodologies and mechanisms

2003 ◽  
Author(s):  
S.H. Voldman
Keyword(s):  
Failure Analysis ◽  
Electrostatic Discharge ◽  
Analysis Models

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis

2014 ◽  
Vol 44 ◽  
pp. 62-70 ◽  
Author(s):  
P. Denis ◽  
P. Dherbécourt ◽  
O. Latry ◽  
C. Genevois ◽  
F. Cuvilly ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Human Body ◽  
Electrostatic Discharge ◽  
Schottky Diodes ◽  
Human Body Model ◽  
Body Model

Susceptibility Scanning as a Failure Analysis Tool for System-Level Electrostatic Discharge (ESD) Problems

2008 ◽  
Vol 50 (2) ◽  
pp. 268-276 ◽  
Author(s):  
Giorgi Muchaidze ◽  
Jayong Koo ◽  
Qing Cai ◽  
Tun Li ◽  
Lijun Han ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Electrostatic Discharge ◽  
System Level ◽  
Analysis Tool

Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests

2009 ◽  
Vol 48 (5) ◽  
pp. 052102 ◽  
Author(s):  
Hiroyuki Ichikawa ◽  
Shinji Matsukawa ◽  
Kotaro Hamada ◽  
Akira Yamaguchi ◽  
Takashi Nakabayashi
Keyword(s):  
Failure Analysis ◽  
Electrostatic Discharge ◽  
Laser Diodes ◽  
Heterostructure Laser ◽  
Buried Heterostructure

scholarly journals Case Study on Failure Analysis of Electrostatic Discharge Damage of Semiconductor Devices

2017 ◽  
Author(s):  
Lin HU ◽  
Qizheng JI ◽  
Sheng-zong HE ◽  
You-liang WANG ◽  
Xiao-si LIANG
Keyword(s):  
Failure Analysis ◽  
Electrostatic Discharge ◽  
Semiconductor Devices

Electrostatic discharge failure analysis of capacitive RF MEMS switches

2007 ◽  
Vol 47 (9-11) ◽  
pp. 1818-1822 ◽  
Author(s):  
J. Ruan ◽  
N. Nolhier ◽  
M. Bafleur ◽  
L. Bary ◽  
F. Coccetti ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Rf Mems ◽  
Electrostatic Discharge ◽  
Mems Switches ◽  
Rf Mems Switches

Electrostatic Discharge (ESD) Damage Simulation on RF MMIC Device

2004 ◽  
Author(s):  
Tan Ewe Chhong
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Electrostatic Discharge ◽  
Human Body Model ◽  
Operating Life ◽  
Machine Model ◽  
Test Models ◽  
Simulation Results ◽  
Damage Simulation ◽  
Latent Failure

Abstract This paper presents electrostatic discharge (ESD) damage simulation results on good units of the RF monolithic microwave integrated circuit device. Two ESD test models, human body model and machine model, simulators were used to simulate the ESD damage on the good units of the RF MMIC devices in different pin configurations. The paper presents the failure analysis results on the field returned units, the ESD damage simulation results, and the failure analysis results on radio frequency operating life failure units. Based on the simulation results obtained, it was concluded that the ESD wounded devices would exhibit a short failure (catastrophic failure) and a low Id failure (latent failure) after being used in the application or field. It is recommended that the static electricity should be eliminated in the workplace at customer site by grounding the operators, equipment and devices in order to prevent the ESD damage.

Electrostatic Discharge (ESD) Failures in Thin Film Resistors

1999 ◽  
Author(s):  
Scott M. Hull
Keyword(s):  
Thin Film ◽  
Failure Analysis ◽  
Electrostatic Discharge ◽  
Tantalum Nitride ◽  
Pattern Design ◽  
Failure Characteristics ◽  
Thin Film Resistors

Abstract Field failures of nichrome thin-film resistors have been investigated recently for several pieces of spaceflight hardware. These failures have involved resistance shifts ranging from a few percent to complete open circuits. Failure analysis and duplication of these failures have revealed that the failures were caused by electrostatic discharge. The failure characteristics and the circuit conditions necessary for failure have been studied for several types of thin-film resistors, including nichrome and tantalum nitride resistive elements. The effects of latent damage and resistive pattern design will also be discussed.

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