2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
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9781479901296, 9781479901265, 9781479901272

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A 2GSps 12bit DAC with SFDR >57.5dBc up to Nyquist bandwidth

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798180 ◽

2013 ◽

Cited By ~ 1

Author(s):

Lei Zhou ◽

Danyu Wu ◽

Fan Jiang ◽

Jin Wu ◽

Zhi Jin ◽

...

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A scalable model for temperature dependent thermal resistance of SiGe HBTs

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798137 ◽

2013 ◽

Cited By ~ 10

Author(s):

Amit Kumar Sahoo ◽

Sebastien Fregonese ◽

Mario Weiss ◽

Cristell Maneux ◽

Thomas Zimmer

Keyword(s):

Thermal Resistance ◽

Temperature Dependent

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Author index

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798124 ◽

2013 ◽

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A versatile low-cost smart power technology platform for applications over broad current and voltage ranges

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798152 ◽

2013 ◽

Cited By ~ 2

Author(s):

Zhi Lin ◽

Hao Hu ◽

Junji Cheng ◽

Xingbi Chen

Keyword(s):

Low Cost ◽

Smart Power ◽

Technology Platform

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Impact of reverse EB stress and mixed-mode stress on low-frequency noise for SiGe HBTs in forward and inverse modes

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798166 ◽

2013 ◽

Author(s):

Jin Tang ◽

Jonggook Kim ◽

Jeff A. Babcock ◽

Alexei Sadovnikov ◽

Tracey L. Krakowski

Keyword(s):

Mixed Mode ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Mode Stress

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A transient triggered bipolar clamp for electrostatic discharge protection in SiGe BiCMOS technologies

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798151 ◽

2013 ◽

Cited By ~ 3

Author(s):

Srivatsan Parthasarathy ◽

Javier A. Salcedo ◽

Jean-Jacques Hajjar

Keyword(s):

Electrostatic Discharge ◽

Sige Bicmos

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Comparative analysis of compact noise model formulations for SiGe-HBTs

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798161 ◽

2013 ◽

Author(s):

Francesco Vitale ◽

Ramses van der Toorn

Keyword(s):

Comparative Analysis ◽

Noise Model

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GaN for automotive applications

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798163 ◽

2013 ◽

Cited By ~ 2

Author(s):

Koichi Nishikawa

Keyword(s):

Automotive Applications

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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798125 ◽

2013 ◽

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A SiGe bipolar 6 bit 20 GS/s Nyquist-rate flash ADC without time interleaving

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2013.6798145 ◽

2013 ◽

Cited By ~ 3

Author(s):

Philipp Ritter ◽

Stephane Le Tual ◽

Bruno Allard ◽

Michael Moller

Keyword(s):

Time Interleaving ◽

Flash Adc ◽

Nyquist Rate

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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 2GSps 12bit DAC with SFDR >57.5dBc up to Nyquist bandwidth

A scalable model for temperature dependent thermal resistance of SiGe HBTs

Author index

A versatile low-cost smart power technology platform for applications over broad current and voltage ranges

Impact of reverse EB stress and mixed-mode stress on low-frequency noise for SiGe HBTs in forward and inverse modes

A transient triggered bipolar clamp for electrostatic discharge protection in SiGe BiCMOS technologies

Comparative analysis of compact noise model formulations for SiGe-HBTs

GaN for automotive applications

Table of contents

A SiGe bipolar 6 bit 20 GS/s Nyquist-rate flash ADC without time interleaving

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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 2GSps 12bit DAC with SFDR >57.5dBc up to Nyquist bandwidth

A scalable model for temperature dependent thermal resistance of SiGe HBTs

Author index

A versatile low-cost smart power technology platform for applications over broad current and voltage ranges

Impact of reverse EB stress and mixed-mode stress on low-frequency noise for SiGe HBTs in forward and inverse modes

A transient triggered bipolar clamp for electrostatic discharge protection in SiGe BiCMOS technologies

Comparative analysis of compact noise model formulations for SiGe-HBTs

GaN for automotive applications

Table of contents

A SiGe bipolar 6 bit 20 GS/s Nyquist-rate flash ADC without time interleaving

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Latest Publications