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Microelectronics and Optoelectronics
Latest Publications
TOTAL DOCUMENTS
17
(FIVE YEARS 0)
H-INDEX
1
(FIVE YEARS 0)
Published By WORLD SCIENTIFIC
9789813232334, 9789813232341
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Denoising and Beat Detection of ECG Signal by Using FPGA
Microelectronics and Optoelectronics
◽
10.1142/9789813232341_0011
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2017
◽
Author(s):
Dheyaa Alhelal
◽
Miad Faezipour
Keyword(s):
Ecg Signal
◽
Beat Detection
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Fabrication of Robust Nano-Signatures for Identification of Authentic Electronic Components and Counterfeit Avoidance
Microelectronics and Optoelectronics
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10.1142/9789813232341_0001
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2017
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Cited By ~ 1
Author(s):
Kiarash Ahi
◽
Abdiel Rivera
◽
Anas Mazadi
◽
Mehdi Anwar
Keyword(s):
Electronic Components
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Critical Layer Thickness: Theory and Experiment in the ZnSe/GaAs (001) Material System
Microelectronics and Optoelectronics
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10.1142/9789813232341_0015
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2017
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Author(s):
Tedi Kujofsa
◽
John E. Ayers
Keyword(s):
Layer Thickness
◽
Critical Layer
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Material System
◽
Critical Layer Thickness
◽
Theory And Experiment
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FRONT MATTER
Microelectronics and Optoelectronics
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10.1142/9789813232341_fmatter
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2017
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Author(s):
F. Jain
◽
C. Broadbridge
◽
H. Tang
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Spatial Wavefunction Switched (SWS) FET SRAM Circuits and Simulation
Microelectronics and Optoelectronics
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10.1142/9789813232341_0004
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2017
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Author(s):
Bander Saman
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P. Gogna
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El-Sayed Hasaneen
◽
J. Chandy
◽
E. Heller
◽
...
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Progression of Strain Relaxation in Linearly-Graded GaAs1-yPy/GaAs (001) Epitaxial Layers Approximated by a Finite Number of Sublayers
Microelectronics and Optoelectronics
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10.1142/9789813232341_0002
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2017
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Author(s):
Tedi Kujofsa
◽
John E. Ayers
Keyword(s):
Finite Number
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Strain Relaxation
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Epitaxial Layers
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Topological Insulators: Electronic Structure, Material Systems and Applications
Microelectronics and Optoelectronics
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10.1142/9789813232341_0013
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2017
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Author(s):
Parijat Sengupta
Keyword(s):
Electronic Structure
◽
Topological Insulators
◽
Material Systems
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Mosaic Crystal Model for Dynamical X-Ray Diffraction from Step-Graded InxGa1-xAs and InxAl1-xAs/GaAs (001) Metamorphic Buffers and Device Structures
Microelectronics and Optoelectronics
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10.1142/9789813232341_0014
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2017
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Author(s):
P. B. Rago
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J. E. Ayers
Keyword(s):
X Ray Diffraction
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X Ray
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Device Structures
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Mosaic Crystal
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Crystal Model
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Metamorphic Buffers
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Multi-Bit NVRAMs Using Quantum Dot Gate Access Channel
Microelectronics and Optoelectronics
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10.1142/9789813232341_0009
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2017
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Author(s):
Murali Lingalugari
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Pik-Yiu Chan
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John Chandy
◽
Evan Heller
◽
Faquir Jain
Keyword(s):
Quantum Dot
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Access Channel
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Carbon Nanotube Synthesis from Block Copolymer Deposited Catalyst
Microelectronics and Optoelectronics
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10.1142/9789813232341_0005
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2017
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Author(s):
K. Woods
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J. Silliman
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T. C. Schwendemann
Keyword(s):
Carbon Nanotube
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Block Copolymer
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Carbon Nanotube Synthesis
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