Multi-Bit NVRAMs Using Quantum Dot Gate Access Channel

This paper presents a quantum dot access channel nonvolatile random access memory (QDAC-NVRAM) which has comparable write and erase times to conventional random access memories but consumes less power and has a smaller footprint. We have fabricated long-channel (W/L=15μm/10μm) nonvolatile random access memories (NVRAMs) with 4μs erase times. These devices are CMOS-compatible and employ novel quantum dot access channel (QDAC) which enables fast storage and retrieval of charge from the floating gate layer. In addition, QDNVRAMs are shown to be capable of storing multiple-bits and potentially scalable to sub 22nm. We are also presenting the simulation results. This paper also presents a memory array architecture using QDAC-NVRAMs.

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Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156418400062 ◽

2018 ◽

Vol 27 (01n02) ◽

pp. 1840006

Author(s):

Murali Lingalugari ◽

Evan Heller ◽

Barath Parthasarathy ◽

John Chandy ◽

Faquir Jain

Keyword(s):

Quantum Dot ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Floating Gate ◽

Access Memory ◽

Access Channel ◽

Ge Quantum Dot ◽

Long Channel ◽

Lower Voltage

This paper presents an approach to enhance floating gate quantum dot nonvolatile random access memory (QDNVRAM) cells in terms of higher-speed and lower-voltage Erase not possible with conventional floating gate nonvolatile memories. It is achieved by directly accessing the floating gate layer with a Ge quantum dot access channel via an additional drain (D2) during the Erase and/or Write operation. Quantum mechanical simulations in GeOx-cladded Ge quantum dot layers functioning as the floating gate as well access channel to facilitate Erase and Write are presented. Experimental data on fabricated long channel nonvolatile random access memory cell with SiOx-cladded Si dots is presented. Quantum simulations show lower voltage operation for GeOx-cladded Ge QD floating gate than SiOx-cladded Si dots. The Erase time is orders of magnitude faster than flash and is comparable to competing NVRAMs.

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Direct measurement of local field factors for second-harmonic generation from quantum dot Langmuir monolayers compressed through the metal-insulator transition

Philosophical Magazine B ◽

10.1080/014186399256637 ◽

1999 ◽

Vol 79 (9) ◽

pp. 1299-1305

Author(s):

C. P. Collier, S. Henrichs, J. R. Heat

Keyword(s):

Quantum Dot ◽

Second Harmonic Generation ◽

Direct Measurement ◽

Harmonic Generation ◽

Local Field ◽

Second Harmonic ◽

Langmuir Monolayers ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator

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Biodistribution 18F-markierter Quantum Dot-Antikörper-Biokonjugate

10.1055/s-0039-1683631 ◽

2019 ◽

Author(s):

O Mishchenko ◽

A Schildan ◽

O Sabri ◽

M Patt

Keyword(s):

Quantum Dot

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Synchronization of Chaotic Quantum Dot Light Emitting Diodes under Optical Feedback Effect

10.32792/utq/utjsci/vol7/2/31 ◽

2020 ◽

pp. 144-148

Keyword(s):

Quantum Dot ◽

Delay Time ◽

Chaos Synchronization ◽

Optical Feedback ◽

Light Emitting Diode ◽

Feedback Effect ◽

Complete Synchronization ◽

Light Emitting ◽

Coupling Methods ◽

Coupling Parameters

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.

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Vertical-cavity emitting devices with quantum-dot structures

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.0171.200108d.0855 ◽

2001 ◽

Vol 171 (8) ◽

pp. 855

Author(s):

Viktor M. Ustinov ◽

N.A. Maleev ◽

Aleksei E. Zhukov ◽

A.R. Kovsh ◽

A.V. Sakharov ◽

...

Keyword(s):

Quantum Dot ◽

Vertical Cavity

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Quantum Dot Bioconjugates as Energy Donors in Fluorescence Resonance Energy Transfer Assays

MRS Proceedings ◽

10.1557/proc-773-n7.9 ◽

2003 ◽

Vol 773 ◽

Author(s):

Aaron R. Clapp ◽

Igor L. Medintz ◽

J. Matthew Mauro ◽

Hedi Mattoussi

Keyword(s):

Energy Transfer ◽

Quantum Dot ◽

Organic Dyes ◽

Resonance Energy Transfer ◽

Resonance Energy ◽

Genetically Engineered ◽

Molar Ratio ◽

Binding Assays ◽

Specific Sequence ◽

Donor Acceptor

AbstractLuminescent CdSe-ZnS core-shell quantum dot (QD) bioconjugates were used as energy donors in fluorescent resonance energy transfer (FRET) binding assays. The QDs were coated with saturating amounts of genetically engineered maltose binding protein (MBP) using a noncovalent immobilization process, and Cy3 organic dyes covalently attached at a specific sequence to MBP were used as energy acceptor molecules. Energy transfer efficiency was measured as a function of the MBP-Cy3/QD molar ratio for two different donor fluorescence emissions (different QD core sizes). Apparent donor-acceptor distances were determined from these FRET studies, and the measured distances are consistent with QD-protein conjugate dimensions previously determined from structural studies.

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