Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications
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(FIVE YEARS 10)

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Published By CRC Press

9781003093428

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

III–V Heterostructure Devices for High-Frequency Applications

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-3 ◽

2021 ◽

pp. 31-44

Author(s):

R. Saravanakumar

Keyword(s):

High Frequency ◽

Heterostructure Devices

Introduction to III–V Materials and HEMT Structure

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-1 ◽

2021 ◽

pp. 1-12

Author(s):

Sanhita Manna

Keyword(s):

Hemt Structure

Overview of THz Applications

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-4 ◽

2021 ◽

pp. 45-52

Author(s):

T. Nagarjuna

Keyword(s):

Thz Applications

Single-Gate (SG) InAs-based HEMT Architecture for THz Applications

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-6 ◽

2021 ◽

pp. 63-78

Author(s):

M. Arun Kumar

Keyword(s):

Thz Applications

Noise Analysis in Dual Quantum Well InAs-based Double-Gate (DG) HEMTs

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-10 ◽

2021 ◽

pp. 117-126

Author(s):

Girish Shankar Mishra

Keyword(s):

Quantum Well ◽

Noise Analysis ◽

Double Gate ◽

Dual Quantum

Effect of Gate Scaling and Composite Channel in InAs HEMTs

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-7 ◽

2021 ◽

pp. 79-90

Author(s):

C. Kamalanathan

Keyword(s):

Composite Channel

III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-2 ◽

2021 ◽

pp. 13-30

Author(s):

D. Godwinraj

Keyword(s):

High Power ◽

Ultralow Power ◽

Heterostructure Devices

Device and Simulation Framework of InAs HEMTs

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-5 ◽

2021 ◽

pp. 53-62

Author(s):

V. Mahesh

Keyword(s):

Simulation Framework

Double-Gate (DG) InAs-based HEMT Architecture for THz Applications

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-8 ◽

2021 ◽

pp. 91-100

Author(s):

R. Poornachandran

Keyword(s):

Double Gate ◽

Thz Applications

Influence of Dual Channel and Drain-Side Recess Length in Double-Gate InAs HEMTs

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications ◽

10.1201/9781003093428-9 ◽

2021 ◽

pp. 101-116

Author(s):

Y. Vamsidhar

Keyword(s):

Double Gate ◽

Dual Channel ◽

Drain Side

Advanced Indium Arsenide-based HEMT Architectures for Terahertz ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By CRC Press

III–V Heterostructure Devices for High-Frequency Applications

Introduction to III–V Materials and HEMT Structure

Overview of THz Applications

Single-Gate (SG) InAs-based HEMT Architecture for THz Applications

Noise Analysis in Dual Quantum Well InAs-based Double-Gate (DG) HEMTs

Effect of Gate Scaling and Composite Channel in InAs HEMTs

III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications

Device and Simulation Framework of InAs HEMTs

Double-Gate (DG) InAs-based HEMT Architecture for THz Applications

Influence of Dual Channel and Drain-Side Recess Length in Double-Gate InAs HEMTs

Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications
Latest Publications