IEEE International SOI Conference
Latest Publications

TOTAL DOCUMENTS

77

(FIVE YEARS 0)

H-INDEX

9

(FIVE YEARS 0)

Published By IEEE

0780307763

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Simulating the Radiation Performance of Simox Buried Oxides Using a Trap-Detrap Model

IEEE International SOI Conference ◽

10.1109/soi.1992.664838 ◽

2005 ◽

Author(s):

D. Kimoton ◽

J. Kerr

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Activation of Nbti Degradation in Soi Pmos by Self-Heating

IEEE International SOI Conference ◽

10.1109/soi.1992.664827 ◽

2005 ◽

Author(s):

R.J.T. Bunyan ◽

M.J. Uren ◽

J.C. Alderman ◽

W. Eccleston

Keyword(s):

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Electron Traps, Structural Change, and Hydrogen Related Simox Defects

IEEE International SOI Conference ◽

10.1109/soi.1992.664778 ◽

2005 ◽

Author(s):

J.F. Conley ◽

P.M. Lenahan ◽

P. Roitman

Keyword(s):

Structural Change ◽

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New Gate Electrodes for Fully-Depleted Soi/cmos; Tin and Poly Si-Ge

IEEE International SOI Conference ◽

10.1109/soi.1992.664835 ◽

2005 ◽

Author(s):

Jeong-Mo Hwang ◽

G. Pollack

Keyword(s):

Fully Depleted ◽

Gate Electrodes ◽

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Dependence of Fully Depleted Soimosfet Breakdown Voltage on Film Thickness and Channel Length

IEEE International SOI Conference ◽

10.1109/soi.1992.664826 ◽

2005 ◽

Author(s):

N. Kistler ◽

E. Ver Ploeg ◽

J. Woo ◽

J. Plummer

Keyword(s):

Film Thickness ◽

Breakdown Voltage ◽

Channel Length ◽

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A New Method for Characterizing Dynamic Self-Heating in Soi Mosfets

IEEE International SOI Conference ◽

10.1109/soi.1992.664822 ◽

2005 ◽

Author(s):

A. Caviglia ◽

A.A. Iliadis

Keyword(s):

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Formation of Ultra Thin Soi-Layer by Implantation of Nitrogen

IEEE International SOI Conference ◽

10.1109/soi.1992.664774 ◽

2005 ◽

Author(s):

R. Schork ◽

H. Ryssel

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Hot-Carrier-Induced Degradation Mechanisms and Anomalous Leakage Current in Hydrogen-Passivated Polysilicon-on-Insulator, LDD p-Mosfet's

IEEE International SOI Conference ◽

10.1109/soi.1992.664795 ◽

2005 ◽

Author(s):

S. Bhattacharya ◽

S. Banerjee ◽

B.-Y. Nguyen ◽

P. Tobin

Keyword(s):

Leakage Current ◽

Degradation Mechanisms ◽

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Measurement of Electron and Hole Saturation Velocities in Silicon Inversion Layers Using Soi Mosfets

IEEE International SOI Conference ◽

10.1109/soi.1992.664819 ◽

2005 ◽

Author(s):

F. Assaderadi ◽

Jian Chen ◽

Ping Ko ◽

Chenming Hu

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A 20ns Multiple Architecture 256k Simox Sram Designed for Harsh Radiation Environments

IEEE International SOI Conference ◽

10.1109/soi.1992.664843 ◽

2005 ◽

Author(s):

W.F. Kraus ◽

B.R. Doyle ◽

J.E. Clark ◽

K.L. Jones ◽

D.M. Thornberry

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