A Novel Bidirectional AlGaN/GaN ESD Protection Diode

Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (CGA (CGC)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (IS) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (Vtrig) and IS of the proposed diode were strongly related to CGA (CGC). With CGA (CGC) increasing from 5 pF to 25 pF, Vtrig and IS decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system.

Printed in-plane electrolyte-gated transistor based on zinc oxide

Printed electronics is a reputable research area that encourages the search for simple alternatives of manufacturing processes for low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed electrolyte-gated transistors with in-plane gate architecture (IPGT) based on zinc oxide nanoparticles (ZnO-NPs). The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a control device, using the same structure as the IPGT described above by adding an ITO strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.1 cm2V-1s-1, while the W/L = 2.5 device exhibited a mobility of 3.7 cm2V-1s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the geometric parameters of the devices were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited better values for mobility and transconductance than the top-gate transistor, showing that the IPGTs setup is a good promise for cheap and printed transistors with performance comparable to standard top-gate transistors.

Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications.

Homocysteine Solution-Induced Response in Aerosol Jet Printed OECTs by Means of Gold and Platinum Gate Electrodes

Homocysteine (Hcy) is a non-protein, sulfur-containing amino acid, which is recognized as a possible risk factor for coronary artery and other pathologies when its levels in the blood exceed the normal range of between 5 and 12 μmol/L (hyperhomocysteinemia). At present, standard procedures in laboratory medicine, such as high-performance liquid chromatography (HPLC), are commonly employed for the quantitation of total Hcy (tHcy), i.e., the sum of the protein-bound (oxidized) and free (homocystine plus reduced Hcy) forms, in biological fluids (particularly, serum or plasma). Here, the response of Aerosol Jet-printed organic electrochemical transistors (OECTs), in the presence of either reduced (free) and oxidized Hcy-based solutions, was analyzed. Two different experimental protocols were followed to this end: the former consisting of gold (Au) electrodes’ biothiol-induced thiolation, while the latter simply used bare platinum (Pt) electrodes. Electrochemical impedance spectroscopy (EIS) analysis was performed both to validate the gold thiolation protocol and to gain insights into the reduced Hcy sensing mechanism by the Au-gated OECTs, which provided a final limit of detection (LoD) of 80 nM. For the OECT response based on Platinum gate electrodes, on the other hand, a LoD of 180 nM was found in the presence of albumin-bound Hcy, with this being the most abundant oxidized Hcy-form (i.e., the protein-bound form) in physiological fluids. Despite the lack of any biochemical functionalization supporting the response selectivity, the findings discussed in this work highlight the potential role of OECT in the development of low-cost point-of-care (POC) electronic platforms that are suitable for the evaluation, in humans, of Hcy levels within the physiological range and in cases of hyperhomocysteinemia.

Spinristor: A Swiss Army Knife of Molecular Electronics

Here, we propose and provide in silico proof of concept of a spinristor; a new molecular electronic component that combines a spin-filter, a rectifier, and a switch, in a single molecule for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to the source, drain, and a pair of gate electrodes. The spin- and electronic polarization due to the enclosed metal leads to differential rectification of the electrons at low voltages applied between the source-drain electrodes, VSD. The position of the encapsulated ion can be switched by a combination of a high VSD and a voltage applied between gate electrodes, VG, to switch the direction of the rectification and spin-filtering ratio. The system can thus be used as a switching rectifier and spin-filter, a spinristor. To the best of our knowledge, such a system has no macroscopic counterpart in electronics.

Parasitic Current Induced by Gate Overlap in Thin-Film Transistors

As novel applications of oxide semiconductors are realized, various structural devices and integrated circuits are being proposed, and the gate-overlay defect phenomenon is becoming more diverse in its effects. Herein, the electrical properties of the transistor that depend on the geometry between the gate and the semiconductor layer are analyzed, and the specific phenomena associated with the degree of overlap are reproduced. In the semiconductor layer, where the gate electrode is not overlapped, it is experimentally shown that a dual current is generated, and the results of 3D simulations confirm that the magnitude of the current increases as the parasitic current moves away from the gate electrode. The generation and path of the parasitic current are then represented visually through laser-enhanced 2D transport measurements; consequently, the flow of the dual current in the transistor is verified to be induced by the electrical potential imbalance in the semiconductor active layer, where the gate electrodes do not overlap.

A superconducting switch actuated by injection of high-energy electrons

Recent experiments with metallic nanowires devices seem to indicate that superconductivity can be controlled by the application of electric fields. In such experiments, critical currents are tuned and eventually suppressed by relatively small voltages applied to nearby gate electrodes, at odds with current understanding of electrostatic screening in metals. We investigate the impact of gate voltages on superconductivity in similar metal nanowires. Varying materials and device geometries, we study the physical mechanism behind the quench of superconductivity. We demonstrate that the transition from superconducting to resistive state can be understood in detail by tunneling of high-energy electrons from the gate contact to the nanowire, resulting in quasiparticle generation and, at sufficiently large currents, heating. Onset of critical current suppression occurs below gate currents of 100fA, which are challenging to detect in typical experiments.